Long-wavelength phonons in TlSbS2. II. Raman-active modes under hydrostatic pressure

P. Rouquette; B. Gil; J. Camassel; J. Pascual

doi:10.1103/PhysRevB.39.1837

Long-wavelength phonons in TlSbS2. II. Raman-active modes under hydrostatic pressure

P. Rouquette, B. Gil, J. Camassel, J. Pascual

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

5 Citations (Scopus)

Abstract

We report the evolution of the first-order Raman modes of the layered semiconductor TlSbS2 with hydrostatic pressure applied up to 10 kbar. All the modes experience a blue shift, except the mode at 286 cm-1, whose insensitivity to pressure shows it to be governed by stretching of Sb-S diatomic chains in the layer. An axially symmetric short-range potential between nearest neighbors has been constructed to account for the full Raman spectrum. © 1989 The American Physical Society.

Original language	English
Pages (from-to)	1837-1843
Journal	Physical Review B-Condensed Matter
Volume	39
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.39.1837
Publication status	Published - 1 Jan 1989

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title = "Long-wavelength phonons in TlSbS2. II. Raman-active modes under hydrostatic pressure",

abstract = "We report the evolution of the first-order Raman modes of the layered semiconductor TlSbS2 with hydrostatic pressure applied up to 10 kbar. All the modes experience a blue shift, except the mode at 286 cm-1, whose insensitivity to pressure shows it to be governed by stretching of Sb-S diatomic chains in the layer. An axially symmetric short-range potential between nearest neighbors has been constructed to account for the full Raman spectrum. {\textcopyright} 1989 The American Physical Society.",

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AU - Rouquette, P.

AU - Gil, B.

AU - Camassel, J.

AU - Pascual, J.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - We report the evolution of the first-order Raman modes of the layered semiconductor TlSbS2 with hydrostatic pressure applied up to 10 kbar. All the modes experience a blue shift, except the mode at 286 cm-1, whose insensitivity to pressure shows it to be governed by stretching of Sb-S diatomic chains in the layer. An axially symmetric short-range potential between nearest neighbors has been constructed to account for the full Raman spectrum. © 1989 The American Physical Society.

AB - We report the evolution of the first-order Raman modes of the layered semiconductor TlSbS2 with hydrostatic pressure applied up to 10 kbar. All the modes experience a blue shift, except the mode at 286 cm-1, whose insensitivity to pressure shows it to be governed by stretching of Sb-S diatomic chains in the layer. An axially symmetric short-range potential between nearest neighbors has been constructed to account for the full Raman spectrum. © 1989 The American Physical Society.

U2 - 10.1103/PhysRevB.39.1837

DO - 10.1103/PhysRevB.39.1837

M3 - Article

VL - 39

SP - 1837

EP - 1843

IS - 3

ER -

Long-wavelength phonons in TlSbS2. II. Raman-active modes under hydrostatic pressure

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