Long-wavelength phonons in TlSbS2. II. Raman-active modes under hydrostatic pressure

P. Rouquette, B. Gil, J. Camassel, J. Pascual

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Abstract

We report the evolution of the first-order Raman modes of the layered semiconductor TlSbS2 with hydrostatic pressure applied up to 10 kbar. All the modes experience a blue shift, except the mode at 286 cm-1, whose insensitivity to pressure shows it to be governed by stretching of Sb-S diatomic chains in the layer. An axially symmetric short-range potential between nearest neighbors has been constructed to account for the full Raman spectrum. © 1989 The American Physical Society.
Original languageEnglish
Pages (from-to)1837-1843
JournalPhysical Review B
Volume39
Issue number3
DOIs
Publication statusPublished - 1 Jan 1989

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