Local Defect Density in Polycrystalline High-k Dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability

C. Couso, M. Porti, J. Martin-Martinez, A. J. Garcia-Loureiro, N. Seoane, M. Nafria

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)

Abstract

© 1980-2012 IEEE. A methodology to determine with nanometer resolution the defect density in polycrystalline HfO2 layers has been developed. This methodology is based on experimental data measured with conductive atomic force microscopy and the obtained results have been validated using Kelvin prove force microscopy measurements. The local defect density ( δox) and thickness (tox) of the gate dielectric have been included into a device simulator to evaluate their impact on the I DVG curves of MOSFETs.
Original languageEnglish
Article number7875071
Pages (from-to)637-640
JournalIEEE Electron Device Letters
Volume38
Issue number5
DOIs
Publication statusPublished - 1 May 2017

Keywords

  • CAFM
  • high-k
  • KPFM
  • MOSFET
  • polycrystalline dielectric

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