Local Defect Density in Polycrystalline High-k Dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability

C. Couso; M. Porti; J. Martin-Martinez; A. J. Garcia-Loureiro; N. Seoane; M. Nafria

doi:10.1109/LED.2017.2680545

Local Defect Density in Polycrystalline High-k Dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability

C. Couso, M. Porti, J. Martin-Martinez, A. J. Garcia-Loureiro, N. Seoane, M. Nafria

Research output: Contribution to journal › Article › Research › peer-review

4 Citations (Scopus)

Abstract

© 1980-2012 IEEE. A methodology to determine with nanometer resolution the defect density in polycrystalline HfO2 layers has been developed. This methodology is based on experimental data measured with conductive atomic force microscopy and the obtained results have been validated using Kelvin prove force microscopy measurements. The local defect density ( δox) and thickness (tox) of the gate dielectric have been included into a device simulator to evaluate their impact on the I DVG curves of MOSFETs.

Original language	English
Article number	7875071
Pages (from-to)	637-640
Journal	IEEE Electron Device Letters
Volume	38
Issue number	5
DOIs	https://doi.org/10.1109/LED.2017.2680545
Publication status	Published - 1 May 2017

Keywords

CAFM
high-k
KPFM
MOSFET
polycrystalline dielectric

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title = "Local Defect Density in Polycrystalline High-k Dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability",

abstract = "{\textcopyright} 1980-2012 IEEE. A methodology to determine with nanometer resolution the defect density in polycrystalline HfO2 layers has been developed. This methodology is based on experimental data measured with conductive atomic force microscopy and the obtained results have been validated using Kelvin prove force microscopy measurements. The local defect density ( δox) and thickness (tox) of the gate dielectric have been included into a device simulator to evaluate their impact on the I DVG curves of MOSFETs.",

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Local Defect Density in Polycrystalline High-k Dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability. / Couso, C.; Porti, M.; Martin-Martinez, J.; Garcia-Loureiro, A. J.; Seoane, N.; Nafria, M.

In: IEEE Electron Device Letters, Vol. 38, No. 5, 7875071, 01.05.2017, p. 637-640.

Research output: Contribution to journal › Article › Research › peer-review

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