Lithium ion irradiation of standard and oxygenated silicon diodes

Andrea Candelori, Dario Bisello, Gianfranco Dalla Betta, Piero Giubilato, Alexander Kaminski, A. Litovchenko, M. Lozano, J. R. Petrie, R. Rando, M. Ullán, J. Wyss

    Research output: Contribution to journalArticleResearchpeer-review

    9 Citations (Scopus)

    Abstract

    The next generation silicon detectors for future very high luminosity colliders or a possible LHC upgrade scenario will require radiation-hard detectors for fluences up to 1016 1-MeV equivalent neutrons/cm 2. These high fluences present strong constraints because long irradiation times are required at the currently available proton irradiation facilities. Energetic (58 MeV) Lithium ions present a nonionizing energy loss higher than protons and neutrons, and could consequently be a new promising radiation source for investigating the radiation hardness of silicon detectors up to very high particle fluences. Starting from this premise, we have investigated the degradation, as measured by the leakage current density increase and depletion voltage variations in the short- and long-term characteristics, induced by 58 MeV Li ions in state-of-the-art silicon diodes processed by two different manufacturers on standard and oxygenated silicon substrates. Finally, the correlation between the radiation damage induced by 58 MeV Li ions and 27 MeV protons is discussed.
    Original languageEnglish
    Pages (from-to)2865-2871
    JournalIEEE Transactions on Nuclear Science
    Volume51
    Issue number5 III
    DOIs
    Publication statusPublished - 1 Oct 2004

    Keywords

    • Diodes
    • Ion radiation effects
    • Radiation detectors

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