Limitations of the spreading resistance technique for ion implant profile measurements

J. Montserrat; J. Bausells; LORA TAMAYO E.

doi:10.1016/0168-583X(91)96174-J

Limitations of the spreading resistance technique for ion implant profile measurements

Translated title of the contribution: Limitations of the spreading resistance technique for ion implant profile measurements

J. Montserrat, J. Bausells, LORA TAMAYO E.

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

1 Citation (Scopus)

Abstract

The main problem with the spreading resistance technique is that it yields a net carrier concentration profile measured on a beveled sample and this may be quite different from the corresponding dopant profile due to carrier spilling. We have made theoretical and experimental studies of this phenomenon to evaluate the accuracy of the technique to measure ion-implanted profiles. We see that errors are important when a pn shallow junction is formed with low implant doses. © 1991.

Translated title of the contribution	Limitations of the spreading resistance technique for ion implant profile measurements
Original language	Multiple languages
Pages (from-to)	261-265
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	55
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(91)96174-J
Publication status	Published - 2 Apr 1991

Access to Document

10.1016/0168-583X(91)96174-J

Cite this

@article{60248d636a874c92b11ead506c4b30a7,

title = "Limitations of the spreading resistance technique for ion implant profile measurements",

abstract = "The main problem with the spreading resistance technique is that it yields a net carrier concentration profile measured on a beveled sample and this may be quite different from the corresponding dopant profile due to carrier spilling. We have made theoretical and experimental studies of this phenomenon to evaluate the accuracy of the technique to measure ion-implanted profiles. We see that errors are important when a pn shallow junction is formed with low implant doses. {\textcopyright} 1991.",

author = "J. Montserrat and J. Bausells and E., {LORA TAMAYO}",

year = "1991",

month = apr,

day = "2",

doi = "10.1016/0168-583X(91)96174-J",

language = "M{\'u}ltiples idiomas",

volume = "55",

pages = "261--265",

journal = "Nuclear Inst. and Methods in Physics Research, B",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Limitations of the spreading resistance technique for ion implant profile measurements

AU - Montserrat, J.

AU - Bausells, J.

AU - E., LORA TAMAYO

PY - 1991/4/2

Y1 - 1991/4/2

N2 - The main problem with the spreading resistance technique is that it yields a net carrier concentration profile measured on a beveled sample and this may be quite different from the corresponding dopant profile due to carrier spilling. We have made theoretical and experimental studies of this phenomenon to evaluate the accuracy of the technique to measure ion-implanted profiles. We see that errors are important when a pn shallow junction is formed with low implant doses. © 1991.

AB - The main problem with the spreading resistance technique is that it yields a net carrier concentration profile measured on a beveled sample and this may be quite different from the corresponding dopant profile due to carrier spilling. We have made theoretical and experimental studies of this phenomenon to evaluate the accuracy of the technique to measure ion-implanted profiles. We see that errors are important when a pn shallow junction is formed with low implant doses. © 1991.

U2 - 10.1016/0168-583X(91)96174-J

DO - 10.1016/0168-583X(91)96174-J

M3 - Artículo

SN - 0168-583X

VL - 55

SP - 261

EP - 265

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-4

ER -

Limitations of the spreading resistance technique for ion implant profile measurements

Abstract

Access to Document

Fingerprint

Cite this