The main problem with the spreading resistance technique is that it yields a net carrier concentration profile measured on a beveled sample and this may be quite different from the corresponding dopant profile due to carrier spilling. We have made theoretical and experimental studies of this phenomenon to evaluate the accuracy of the technique to measure ion-implanted profiles. We see that errors are important when a pn shallow junction is formed with low implant doses. © 1991.
|Journal||Nuclear Inst. and Methods in Physics Research, B|
|Publication status||Published - 2 Apr 1991|