Limitations of oxide breakdown accelerated testing for reliability simulation

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Abstract

Thin‐oxide MOS capacitors are analysed to reveal the limitations of oxide breakdown accelerated testing used for reliability simulations at the circuit level. The results show that the probability of failure can only be extrapolated from the tails of the statistical distributions. Copyright © 1993 John Wiley & Sons, Ltd.
Original languageEnglish
Pages (from-to)333-336
JournalQuality and Reliability Engineering International
Volume9
Issue number4
DOIs
Publication statusPublished - 1 Jan 1993

Keywords

  • Breakdown
  • MOS
  • Reliability
  • SiO 2
  • VLSI

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