Lattice dynamics of CdGeAs<inf>2</inf>

J. Pujol; L. Artús; J. Pascual; J. Camassel

doi:10.1088/0031-8949/41/5/014

Lattice dynamics of CdGeAs<inf>2</inf>

J. Pujol, L. Artús, J. Pascual, J. Camassel

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

11 Citations (Scopus)

Abstract

A Keating model calculation of phonon dispersion in CdGeAs2 with two bond stretching force constants between nearest neighbours and two bond bending force constants between second nearest neighbours is presented. The four parameters have been determined from a least mean square fit to our Raman data. In this study one emphasizes the relationship which connects zone centre modes in CdGeAs2 and phonons at Γ, X and W points of the Brillouin zone in the associated zincblende materials: GaAs and InAs, on the one hand, and the binary analog Ga0.5In0.5As, on the other hand. One shows that the optical modes in CdGeAs2 can be classified as GaAs-like, InAs-like and mixed GaAs/InAs-like. © 1990 IOP Publishing Ltd.

Original language	English
Pages (from-to)	696-698
Journal	Physica Scripta
Volume	41
Issue number	5
DOIs	https://doi.org/10.1088/0031-8949/41/5/014
Publication status	Published - 1 May 1990

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title = "Lattice dynamics of CdGeAs2",

abstract = "A Keating model calculation of phonon dispersion in CdGeAs2 with two bond stretching force constants between nearest neighbours and two bond bending force constants between second nearest neighbours is presented. The four parameters have been determined from a least mean square fit to our Raman data. In this study one emphasizes the relationship which connects zone centre modes in CdGeAs2 and phonons at Γ, X and W points of the Brillouin zone in the associated zincblende materials: GaAs and InAs, on the one hand, and the binary analog Ga0.5In0.5As, on the other hand. One shows that the optical modes in CdGeAs2 can be classified as GaAs-like, InAs-like and mixed GaAs/InAs-like. {\textcopyright} 1990 IOP Publishing Ltd.",

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N2 - A Keating model calculation of phonon dispersion in CdGeAs2 with two bond stretching force constants between nearest neighbours and two bond bending force constants between second nearest neighbours is presented. The four parameters have been determined from a least mean square fit to our Raman data. In this study one emphasizes the relationship which connects zone centre modes in CdGeAs2 and phonons at Γ, X and W points of the Brillouin zone in the associated zincblende materials: GaAs and InAs, on the one hand, and the binary analog Ga0.5In0.5As, on the other hand. One shows that the optical modes in CdGeAs2 can be classified as GaAs-like, InAs-like and mixed GaAs/InAs-like. © 1990 IOP Publishing Ltd.

AB - A Keating model calculation of phonon dispersion in CdGeAs2 with two bond stretching force constants between nearest neighbours and two bond bending force constants between second nearest neighbours is presented. The four parameters have been determined from a least mean square fit to our Raman data. In this study one emphasizes the relationship which connects zone centre modes in CdGeAs2 and phonons at Γ, X and W points of the Brillouin zone in the associated zincblende materials: GaAs and InAs, on the one hand, and the binary analog Ga0.5In0.5As, on the other hand. One shows that the optical modes in CdGeAs2 can be classified as GaAs-like, InAs-like and mixed GaAs/InAs-like. © 1990 IOP Publishing Ltd.

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JO - Physica Scripta

JF - Physica Scripta

IS - 5

ER -

Lattice dynamics of CdGeAs<inf>2</inf>

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