Lateral spread of implanted ion distributions in 6H-SiC: Simulation

E. Morvan, N. Mestres, J. Pascual, D. Flores, M. Vellvehi, J. Rebollo

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12 Citations (Scopus)


In this paper, Monte Carlo simulation, using improved models for electronic stopping and 3D damage accumulation has been carried out to calculate the lateral distribution of ions implanted into 6H-SiC crystal. Two dimensional concentration contour plots are used to show the lateral spread of implanted Al+ ions at mask edges. It appears that channeling strongly influences the shape of lateral distributions due to the capture of random implanted ions by axial channels lying parallel to the (0001) surface of 6H-SiC which appears alternatively every 30° around the 〈0001〉 axis, according to the symmetry of the 6H-SiC crystal. This phenomenon, if confirmed by SIMS 2D profiling, could have important consequences on the behavior of ion implanted lateral junctions of SiC devices. © 1999 Elsevier Science S.A.
Original languageEnglish
Pages (from-to)373-377
JournalMaterials Science and Engineering B
Publication statusPublished - 30 Jul 1999


  • Channeling
  • Ion implantation
  • Lateral spread
  • Process simulation
  • Silicon Carbide


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