TY - JOUR
T1 - Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography
AU - Menéndez, Enric
AU - Modarresi, Hiwa
AU - Petermann, Claire
AU - Nogués, Josep
AU - Domingo, Neus
AU - Liu, Haoliang
AU - Kirby, Brian J.
AU - Mohd, Amir Syed
AU - Salhi, Zahir
AU - Babcock, Earl
AU - Mattauch, Stefan
AU - Van Haesendonck, Chris
AU - Vantomme, André
AU - Temst, Kristiaan
PY - 2017/3/21
Y1 - 2017/3/21
N2 - © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.
AB - © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.
KW - ion implantation
KW - lateral multilayers
KW - lithography
KW - magnetoresistance
KW - planar technology
U2 - https://doi.org/10.1002/smll.201603465
DO - https://doi.org/10.1002/smll.201603465
M3 - Article
SN - 1613-6810
VL - 13
JO - Small
JF - Small
IS - 11
M1 - 1603465
ER -