Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography

Enric Menéndez, Hiwa Modarresi, Claire Petermann, Josep Nogués, Neus Domingo, Haoliang Liu, Brian J. Kirby, Amir Syed Mohd, Zahir Salhi, Earl Babcock, Stefan Mattauch, Chris Van Haesendonck, André Vantomme, Kristiaan Temst

Research output: Contribution to journalArticleResearchpeer-review

9 Citations (Scopus)

Abstract

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.
Original languageEnglish
Article number1603465
JournalSmall
Volume13
Issue number11
DOIs
Publication statusPublished - 21 Mar 2017

Keywords

  • ion implantation
  • lateral multilayers
  • lithography
  • magnetoresistance
  • planar technology

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