Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications

Francisco Pasadas; Mohamed Saeed; Ahmed Hamed; Zhenxing Wang; Renato Negra; Daniel Neumaier; David Jimenez

doi:10.1109/LED.2019.2911116

Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications

Francisco Pasadas, Mohamed Saeed, Ahmed Hamed, Zhenxing Wang, Renato Negra, Daniel Neumaier, David Jimenez

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research

8 Citations (Scopus)

Abstract

© 1980-2012 IEEE. We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, and the latter accounts for the vertical electron transport from/toward graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog-A to be used in the existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector.

Original language	English
Article number	8691530
Pages (from-to)	1005-1008
Journal	IEEE Electron Device Letters
Volume	40
DOIs	https://doi.org/10.1109/LED.2019.2911116
Publication status	Published - 1 Jun 2019

Keywords

Compact model
diode
energy harvesting
graphene
power detector
rectification
Verilog-A

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10.1109/LED.2019.2911116

Cite this

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title = "Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications",

abstract = "{\textcopyright} 1980-2012 IEEE. We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, and the latter accounts for the vertical electron transport from/toward graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog-A to be used in the existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector.",

keywords = "Compact model, diode, energy harvesting, graphene, power detector, rectification, Verilog-A",

author = "Francisco Pasadas and Mohamed Saeed and Ahmed Hamed and Zhenxing Wang and Renato Negra and Daniel Neumaier and David Jimenez",

year = "2019",

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doi = "10.1109/LED.2019.2911116",

language = "English",

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journal = "IEEE Electron Device Letters",

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TY - JOUR

T1 - Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications

AU - Pasadas, Francisco

AU - Saeed, Mohamed

AU - Hamed, Ahmed

AU - Wang, Zhenxing

AU - Negra, Renato

AU - Neumaier, Daniel

AU - Jimenez, David

PY - 2019/6/1

Y1 - 2019/6/1

N2 - © 1980-2012 IEEE. We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, and the latter accounts for the vertical electron transport from/toward graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog-A to be used in the existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector.

AB - © 1980-2012 IEEE. We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, and the latter accounts for the vertical electron transport from/toward graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog-A to be used in the existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector.

KW - Compact model

KW - diode

KW - energy harvesting

KW - graphene

KW - power detector

KW - rectification

KW - Verilog-A

UR - http://www.mendeley.com/research/largesignal-model-metalinsulatorgraphene-diode-targeting-rf-applications

U2 - 10.1109/LED.2019.2911116

DO - 10.1109/LED.2019.2911116

M3 - Article

SN - 0741-3106

VL - 40

SP - 1005

EP - 1008

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

M1 - 8691530

ER -

Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications

Abstract

Keywords

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