Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: Theory versus experiment

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Abstract

© 2015 AIP Publishing LLC. Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for flexible radio-frequency applications, gaining control of it requires the formulation of appropriate models for the drain current, charge, and capacitance. In this work, we have developed them for a dual-gated bilayer graphene field-effect transistor. A drift-diffusion mechanism for the carrier transport has been considered coupled with an appropriate field-effect model taking into account the electronic properties of the bilayer graphene. Extrinsic resistances have been included considering the formation of a Schottky barrier at the metal-bilayer graphene interface. The proposed model has been benchmarked against experimental prototype transistors, discussing the main figures of merit targeting radio-frequency applications.
Original languageEnglish
Article number244501
JournalJournal of Applied Physics
Volume118
DOIs
Publication statusPublished - 22 Dec 2015

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