Large-Signal Model of Graphene Field- Effect Transistors - Part II: Circuit Performance Benchmarking

Francisco Pasadas, David Jiménez

Research output: Contribution to journalArticleResearchpeer-review

12 Citations (Scopus)

Abstract

© 2016 IEEE. This paper presents a circuit performance benchmarking using the large-signal model of graphene FET reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. In particular, we have simulated a high-frequency performance amplifier, together with other circuits that take the advantage of the ambipolarity of graphene, such as a frequency doubler, an RF subharmonic mixer, and a multiplier phase detector. A variety of simulations comprising dc, transient dynamics, Bode diagram, S parameters, and power spectrum have been compared with experimental data to assess the validity of the model.
Original languageEnglish
Article number7471463
Pages (from-to)2942-2947
JournalIEEE Transactions on Electron Devices
Volume63
DOIs
Publication statusPublished - 1 Jul 2016

Keywords

  • Ambipolar electronics
  • FET
  • Verilog-A
  • circuit performance benchmarking
  • compact model
  • graphene
  • intrinsic capacitance

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