© 2016 IEEE. This paper presents a circuit performance benchmarking using the large-signal model of graphene FET reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. In particular, we have simulated a high-frequency performance amplifier, together with other circuits that take the advantage of the ambipolarity of graphene, such as a frequency doubler, an RF subharmonic mixer, and a multiplier phase detector. A variety of simulations comprising dc, transient dynamics, Bode diagram, S parameters, and power spectrum have been compared with experimental data to assess the validity of the model.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Jul 2016|
- Ambipolar electronics
- circuit performance benchmarking
- compact model
- intrinsic capacitance