High quality La1-xBaxMnOz (LBMO) thin films were successfully grown by the ion beam sputtering method for the first time on MgO and LaAlO3 (LAO) substrates simultaneously with a supply of molecular oxygen at a substrate temperature (Ts) of 700°C. These films exhibit a single phase and good crystallinity. Effects of oxygen partial pressure (PO) on the crystallinity and c-parameter are studied systematically. The full-width at half-maximum (FWHM) averaged over (001) and (002) X-ray diffraction peaks shows a minimum at PO around 2 mTorr for the films grown on MgO. At this PO, FWHM for the films grown on MgO substrate is about 3 times less than that for the films grown on LAO substrate. This indicates that better crystalline films can be grown on MgO in this particular window of PO ∼ 2 mTorr. The c-parameter values are much smaller for the films grown on MgO as compared to LAO. © 2001 Elsevier Science B.V. All rights reserved.
|Journal||Journal of Crystal Growth|
|Publication status||Published - 2 Jul 2001|
- A1. Nucleation
- A3. Physical vapor deposition processes
- B1. Manganites
- B1. Perovskites
- B2. Magnetic materials