La<inf>1-x</inf>Ba<inf>x</inf>MnO<inf>z</inf> thin film growth by ion beam sputtering: Effects of oxygen partial pressure

M. Tada; J. Yamada; V. V. Srinivasu; V. Sreedevi; H. Kohmoto; A. Hashizume; Y. Inamori; T. Tanaka; A. Harrou; J. Nogués; J. S. Muñoz; J. M. Colino; T. Endo

doi:10.1016/S0022-0248(01)01192-7

La<inf>1-x</inf>Ba<inf>x</inf>MnO<inf>z</inf> thin film growth by ion beam sputtering: Effects of oxygen partial pressure

M. Tada, J. Yamada, V. V. Srinivasu, V. Sreedevi, H. Kohmoto, A. Hashizume, Y. Inamori, T. Tanaka, A. Harrou, J. Nogués, J. S. Muñoz, J. M. Colino, T. Endo

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

5 Citations (Scopus)

Abstract

High quality La1-xBaxMnOz (LBMO) thin films were successfully grown by the ion beam sputtering method for the first time on MgO and LaAlO3 (LAO) substrates simultaneously with a supply of molecular oxygen at a substrate temperature (Ts) of 700°C. These films exhibit a single phase and good crystallinity. Effects of oxygen partial pressure (PO) on the crystallinity and c-parameter are studied systematically. The full-width at half-maximum (FWHM) averaged over (001) and (002) X-ray diffraction peaks shows a minimum at PO around 2 mTorr for the films grown on MgO. At this PO, FWHM for the films grown on MgO substrate is about 3 times less than that for the films grown on LAO substrate. This indicates that better crystalline films can be grown on MgO in this particular window of PO ∼ 2 mTorr. The c-parameter values are much smaller for the films grown on MgO as compared to LAO. © 2001 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	415-418
Journal	Journal of Crystal Growth
Volume	229
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(01)01192-7
Publication status	Published - 2 Jul 2001

Keywords

A1. Nucleation
A3. Physical vapor deposition processes
B1. Manganites
B1. Perovskites
B2. Magnetic materials

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10.1016/S0022-0248(01)01192-7

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Tada, M., Yamada, J., Srinivasu, V. V., Sreedevi, V., Kohmoto, H., Hashizume, A., Inamori, Y., Tanaka, T., Harrou, A., Nogués, J., Muñoz, J. S., Colino, J. M., & Endo, T. (2001). La<inf>1-x</inf>Ba<inf>x</inf>MnO<inf>z</inf> thin film growth by ion beam sputtering: Effects of oxygen partial pressure. Journal of Crystal Growth, 229(1), 415-418. https://doi.org/10.1016/S0022-0248(01)01192-7

Tada, M. ; Yamada, J. ; Srinivasu, V. V. ; Sreedevi, V. ; Kohmoto, H. ; Hashizume, A. ; Inamori, Y. ; Tanaka, T. ; Harrou, A. ; Nogués, J. ; Muñoz, J. S. ; Colino, J. M. ; Endo, T. / La<inf>1-x</inf>Ba<inf>x</inf>MnO<inf>z</inf> thin film growth by ion beam sputtering: Effects of oxygen partial pressure. In: Journal of Crystal Growth. 2001 ; Vol. 229, No. 1. pp. 415-418.

@article{16cacb83f301438087550637f9c7c446,

title = "La1-xBaxMnOz thin film growth by ion beam sputtering: Effects of oxygen partial pressure",

abstract = "High quality La1-xBaxMnOz (LBMO) thin films were successfully grown by the ion beam sputtering method for the first time on MgO and LaAlO3 (LAO) substrates simultaneously with a supply of molecular oxygen at a substrate temperature (Ts) of 700°C. These films exhibit a single phase and good crystallinity. Effects of oxygen partial pressure (PO) on the crystallinity and c-parameter are studied systematically. The full-width at half-maximum (FWHM) averaged over (001) and (002) X-ray diffraction peaks shows a minimum at PO around 2 mTorr for the films grown on MgO. At this PO, FWHM for the films grown on MgO substrate is about 3 times less than that for the films grown on LAO substrate. This indicates that better crystalline films can be grown on MgO in this particular window of PO ∼ 2 mTorr. The c-parameter values are much smaller for the films grown on MgO as compared to LAO. {\textcopyright} 2001 Elsevier Science B.V. All rights reserved.",

keywords = "A1. Nucleation, A3. Physical vapor deposition processes, B1. Manganites, B1. Perovskites, B2. Magnetic materials",

author = "M. Tada and J. Yamada and Srinivasu, {V. V.} and V. Sreedevi and H. Kohmoto and A. Hashizume and Y. Inamori and T. Tanaka and A. Harrou and J. Nogu{\'e}s and Mu{\~n}oz, {J. S.} and Colino, {J. M.} and T. Endo",

year = "2001",

month = jul,

day = "2",

doi = "10.1016/S0022-0248(01)01192-7",

language = "English",

volume = "229",

pages = "415--418",

number = "1",

}

Tada, M, Yamada, J, Srinivasu, VV, Sreedevi, V, Kohmoto, H, Hashizume, A, Inamori, Y, Tanaka, T, Harrou, A, Nogués, J, Muñoz, JS, Colino, JM & Endo, T 2001, 'La<inf>1-x</inf>Ba<inf>x</inf>MnO<inf>z</inf> thin film growth by ion beam sputtering: Effects of oxygen partial pressure', Journal of Crystal Growth, vol. 229, no. 1, pp. 415-418. https://doi.org/10.1016/S0022-0248(01)01192-7

La<inf>1-x</inf>Ba<inf>x</inf>MnO<inf>z</inf> thin film growth by ion beam sputtering: Effects of oxygen partial pressure. / Tada, M.; Yamada, J.; Srinivasu, V. V.; Sreedevi, V.; Kohmoto, H.; Hashizume, A.; Inamori, Y.; Tanaka, T.; Harrou, A.; Nogués, J.; Muñoz, J. S.; Colino, J. M.; Endo, T.

In: Journal of Crystal Growth, Vol. 229, No. 1, 02.07.2001, p. 415-418.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - La1-xBaxMnOz thin film growth by ion beam sputtering: Effects of oxygen partial pressure

AU - Tada, M.

AU - Yamada, J.

AU - Srinivasu, V. V.

AU - Sreedevi, V.

AU - Kohmoto, H.

AU - Hashizume, A.

AU - Inamori, Y.

AU - Tanaka, T.

AU - Harrou, A.

AU - Nogués, J.

AU - Muñoz, J. S.

AU - Colino, J. M.

AU - Endo, T.

PY - 2001/7/2

Y1 - 2001/7/2

N2 - High quality La1-xBaxMnOz (LBMO) thin films were successfully grown by the ion beam sputtering method for the first time on MgO and LaAlO3 (LAO) substrates simultaneously with a supply of molecular oxygen at a substrate temperature (Ts) of 700°C. These films exhibit a single phase and good crystallinity. Effects of oxygen partial pressure (PO) on the crystallinity and c-parameter are studied systematically. The full-width at half-maximum (FWHM) averaged over (001) and (002) X-ray diffraction peaks shows a minimum at PO around 2 mTorr for the films grown on MgO. At this PO, FWHM for the films grown on MgO substrate is about 3 times less than that for the films grown on LAO substrate. This indicates that better crystalline films can be grown on MgO in this particular window of PO ∼ 2 mTorr. The c-parameter values are much smaller for the films grown on MgO as compared to LAO. © 2001 Elsevier Science B.V. All rights reserved.

AB - High quality La1-xBaxMnOz (LBMO) thin films were successfully grown by the ion beam sputtering method for the first time on MgO and LaAlO3 (LAO) substrates simultaneously with a supply of molecular oxygen at a substrate temperature (Ts) of 700°C. These films exhibit a single phase and good crystallinity. Effects of oxygen partial pressure (PO) on the crystallinity and c-parameter are studied systematically. The full-width at half-maximum (FWHM) averaged over (001) and (002) X-ray diffraction peaks shows a minimum at PO around 2 mTorr for the films grown on MgO. At this PO, FWHM for the films grown on MgO substrate is about 3 times less than that for the films grown on LAO substrate. This indicates that better crystalline films can be grown on MgO in this particular window of PO ∼ 2 mTorr. The c-parameter values are much smaller for the films grown on MgO as compared to LAO. © 2001 Elsevier Science B.V. All rights reserved.

KW - A1. Nucleation

KW - A3. Physical vapor deposition processes

KW - B1. Manganites

KW - B1. Perovskites

KW - B2. Magnetic materials

U2 - 10.1016/S0022-0248(01)01192-7

DO - 10.1016/S0022-0248(01)01192-7

M3 - Article

VL - 229

SP - 415

EP - 418

IS - 1

ER -