La<inf>1-x</inf>Ba<inf>x</inf>MnO<inf>z</inf> thin film growth by ion beam sputtering: Effects of oxygen partial pressure

M. Tada, J. Yamada, V. V. Srinivasu, V. Sreedevi, H. Kohmoto, A. Hashizume, Y. Inamori, T. Tanaka, A. Harrou, J. Nogués, J. S. Muñoz, J. M. Colino, T. Endo

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5 Citations (Scopus)

Abstract

High quality La1-xBaxMnOz (LBMO) thin films were successfully grown by the ion beam sputtering method for the first time on MgO and LaAlO3 (LAO) substrates simultaneously with a supply of molecular oxygen at a substrate temperature (Ts) of 700°C. These films exhibit a single phase and good crystallinity. Effects of oxygen partial pressure (PO) on the crystallinity and c-parameter are studied systematically. The full-width at half-maximum (FWHM) averaged over (001) and (002) X-ray diffraction peaks shows a minimum at PO around 2 mTorr for the films grown on MgO. At this PO, FWHM for the films grown on MgO substrate is about 3 times less than that for the films grown on LAO substrate. This indicates that better crystalline films can be grown on MgO in this particular window of PO ∼ 2 mTorr. The c-parameter values are much smaller for the films grown on MgO as compared to LAO. © 2001 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)415-418
JournalJournal of Crystal Growth
Volume229
Issue number1
DOIs
Publication statusPublished - 2 Jul 2001

Keywords

  • A1. Nucleation
  • A3. Physical vapor deposition processes
  • B1. Manganites
  • B1. Perovskites
  • B2. Magnetic materials

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