Irradiation induced weak spots in SiO<inf>2</inf> gate oxides of MOS devices observed with C-AFM

M. Porti; M. Nafría; X. Aymerich; A. Cester; A. Paccagnella; S. Cimino

doi:https://doi.org/10.1049/el:20057289

Irradiation induced weak spots in SiO<inf>2</inf> gate oxides of MOS devices observed with C-AFM

M. Porti, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, S. Cimino

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

3 Citations (Scopus)

Abstract

A nanoscale characterisation of the electrical conduction of irradiated thin SiO2 gate oxides of MOS devices has been performed with a conductive atomic force microscope. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Although their I-V characteristics show a leaky behaviour, these locations have not experienced a hard breakdown event.

Original language	English
Pages (from-to)	101-103
Journal	Electronics Letters
Volume	41
DOIs	https://doi.org/10.1049/el:20057289
Publication status	Published - 20 Jan 2005

Access to Document

https://doi.org/10.1049/el:20057289

Cite this

@article{9a7ed5084fd34bc5a5625fc24d2984bc,

title = "Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM",

abstract = "A nanoscale characterisation of the electrical conduction of irradiated thin SiO2 gate oxides of MOS devices has been performed with a conductive atomic force microscope. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Although their I-V characteristics show a leaky behaviour, these locations have not experienced a hard breakdown event.",

author = "M. Porti and M. Nafr{\'i}a and X. Aymerich and A. Cester and A. Paccagnella and S. Cimino",

year = "2005",

month = jan,

day = "20",

doi = "https://doi.org/10.1049/el:20057289",

language = "English",

volume = "41",

pages = "101--103",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

}

TY - JOUR

T1 - Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

AU - Cester, A.

AU - Paccagnella, A.

AU - Cimino, S.

PY - 2005/1/20

Y1 - 2005/1/20

N2 - A nanoscale characterisation of the electrical conduction of irradiated thin SiO2 gate oxides of MOS devices has been performed with a conductive atomic force microscope. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Although their I-V characteristics show a leaky behaviour, these locations have not experienced a hard breakdown event.

AB - A nanoscale characterisation of the electrical conduction of irradiated thin SiO2 gate oxides of MOS devices has been performed with a conductive atomic force microscope. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Although their I-V characteristics show a leaky behaviour, these locations have not experienced a hard breakdown event.

U2 - https://doi.org/10.1049/el:20057289

DO - https://doi.org/10.1049/el:20057289

M3 - Article

SN - 0013-5194

VL - 41

SP - 101

EP - 103

JO - Electronics Letters

JF - Electronics Letters

ER -

Irradiation induced weak spots in SiO<inf>2</inf> gate oxides of MOS devices observed with C-AFM

Abstract

Access to Document

Fingerprint

Cite this