Irradiation induced weak spots in SiO<inf>2</inf> gate oxides of MOS devices observed with C-AFM

M. Porti, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, S. Cimino

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)

Abstract

A nanoscale characterisation of the electrical conduction of irradiated thin SiO2 gate oxides of MOS devices has been performed with a conductive atomic force microscope. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Although their I-V characteristics show a leaky behaviour, these locations have not experienced a hard breakdown event.
Original languageEnglish
Pages (from-to)101-103
JournalElectronics Letters
Volume41
DOIs
Publication statusPublished - 20 Jan 2005

Fingerprint Dive into the research topics of 'Irradiation induced weak spots in SiO<inf>2</inf> gate oxides of MOS devices observed with C-AFM'. Together they form a unique fingerprint.

Cite this