Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology

J. Bausells, J. Carrabina, A. Errachid, A. Merlos

    Research output: Contribution to journalArticleResearchpeer-review

    233 Citations (Scopus)

    Abstract

    The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 m from Atmel-ES2) is reported. The ISFET devices have a gate structure compatible with the CMOS process, with an electrically floating electrode consisting on polysilicon plus the two metals. The passivation oxynitride layer acts as the pH-sensitive material in contact with the liquid solution. The devices have shown good operating characteristics, with a 47 mV/pH response. The use of a commercial CMOS process allows the straightforward integration of signal-processing circuitry. An ISFET amplifier circuit has been integrated with the ISFET sensors.
    Original languageEnglish
    Pages (from-to)56-62
    JournalSensors and Actuators, B: Chemical
    Volume57
    Issue number1-3
    DOIs
    Publication statusPublished - 7 Sep 1999

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