Ion beam synthesis of n-type doped SiC layers

C. Serre, D. Panknin, A. Pérez-Rodríguez, A. Romano-Rodríguez, J. R. Morante, R. Kögler, W. Skorupa, J. Esteve, M. C. Acero

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    Abstract

    This work reports the ion beam synthesis of n-doped SiC layers. For this, two approaches have been studied: (i) conventional method of doping by implanting with N + into an ion beam synthesised SiC layer and (ii) a novel method based on pre-doping (with N + and P + ) of the Si wafers before the ion beam synthesis of SiC. For the N + implantation the electrical data show a p-type overcompensation of the SiC layers for both doping methods used. The structural (XRD) and in-depth (SIMS, spreading resistance) analysis of the samples suggest this overcompensation to be induced by p-type active defects related to the N + ion implantation damage, and therefore, the need for further optimisation of their thermal processing. In contrast, the P + -doped SiC layers always show n-type conductivity. This is also accompanied by a higher structural quality, being the spectral features of the layers similar to those from the undoped material. Our electrical data, together with the absence of additional stress related to P-implant suggests that this technique could be suitable to avoid effects related to the ion implantation damage in the SiC lattice, although the electrical activation of P in the SiC lattice is about one order of magnitude lower than in Si. © 2001 Published by Elsevier Science B.V.
    Original languageEnglish
    Pages (from-to)367-371
    JournalApplied Surface Science
    Volume184
    Issue number1-4
    DOIs
    Publication statusPublished - 12 Dec 2001

    Keywords

    • Doping
    • Ion beam synthesis
    • Ion implantation
    • SiC on Si

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