TY - JOUR
T1 - Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM
AU - Gonzalez, Mireia Bargallo
AU - Martin-Martinez, Javier
AU - Maestro, Marcos
AU - Acero, María Cruz
AU - Nafría, Montserrat
AU - Campabadal, Francesca
PY - 2016/1/1
Y1 - 2016/1/1
N2 - © 1963-2012 IEEE. In this paper, the presence of filamentary current instabilities in the high resistance state of Ni/HfO2-based RRAM devices and their associated current fluctuations mechanisms are explored. After systematic measurements, the advanced weighted time-lag plot method is employed to accurately identify the contribution of multiple electrically active defects and to minimize the negative effect of the background noise. Special attention is given to the physical analysis of multilevel random telegraph noise (RTN) signals caused by both independent and interactive defects located in the vicinity of the conductive filament (CF), which may alter the tunneling path and induce large stochastic current fluctuations. In addition, irreversible current changes, owing to trap density variations inside or near the CF, are also identified. Finally, the voltage dependence of the RTN phenomena and the occurrence of stress-induced complex fluctuations is evaluated.
AB - © 1963-2012 IEEE. In this paper, the presence of filamentary current instabilities in the high resistance state of Ni/HfO2-based RRAM devices and their associated current fluctuations mechanisms are explored. After systematic measurements, the advanced weighted time-lag plot method is employed to accurately identify the contribution of multiple electrically active defects and to minimize the negative effect of the background noise. Special attention is given to the physical analysis of multilevel random telegraph noise (RTN) signals caused by both independent and interactive defects located in the vicinity of the conductive filament (CF), which may alter the tunneling path and induce large stochastic current fluctuations. In addition, irreversible current changes, owing to trap density variations inside or near the CF, are also identified. Finally, the voltage dependence of the RTN phenomena and the occurrence of stress-induced complex fluctuations is evaluated.
KW - HfO2
KW - random telegraph noise (RTN)
KW - resistive random access memory (RRAM)
KW - unipolar switching
KW - variability
U2 - 10.1109/TED.2016.2583924
DO - 10.1109/TED.2016.2583924
M3 - Article
SN - 0018-9383
VL - 63
SP - 3116
EP - 3122
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
M1 - 7509614
ER -