Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO<inf>2</inf>-Based RRAM

Mireia Bargallo Gonzalez; Javier Martin-Martinez; Marcos Maestro; María Cruz Acero; Montserrat Nafría; Francesca Campabadal

doi:10.1109/TED.2016.2583924

Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO<inf>2</inf>-Based RRAM

Mireia Bargallo Gonzalez, Javier Martin-Martinez, Marcos Maestro, María Cruz Acero, Montserrat Nafría, Francesca Campabadal

Research output: Contribution to journal › Article › Research › peer-review

11 Citations (Scopus)

Abstract

© 1963-2012 IEEE. In this paper, the presence of filamentary current instabilities in the high resistance state of Ni/HfO2-based RRAM devices and their associated current fluctuations mechanisms are explored. After systematic measurements, the advanced weighted time-lag plot method is employed to accurately identify the contribution of multiple electrically active defects and to minimize the negative effect of the background noise. Special attention is given to the physical analysis of multilevel random telegraph noise (RTN) signals caused by both independent and interactive defects located in the vicinity of the conductive filament (CF), which may alter the tunneling path and induce large stochastic current fluctuations. In addition, irreversible current changes, owing to trap density variations inside or near the CF, are also identified. Finally, the voltage dependence of the RTN phenomena and the occurrence of stress-induced complex fluctuations is evaluated.

Original language	English
Article number	7509614
Pages (from-to)	3116-3122
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	8
DOIs	https://doi.org/10.1109/TED.2016.2583924
Publication status	Published - 1 Jan 2016

Keywords

HfO2
random telegraph noise (RTN)
resistive random access memory (RRAM)
unipolar switching
variability

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title = "Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM",

abstract = "{\textcopyright} 1963-2012 IEEE. In this paper, the presence of filamentary current instabilities in the high resistance state of Ni/HfO2-based RRAM devices and their associated current fluctuations mechanisms are explored. After systematic measurements, the advanced weighted time-lag plot method is employed to accurately identify the contribution of multiple electrically active defects and to minimize the negative effect of the background noise. Special attention is given to the physical analysis of multilevel random telegraph noise (RTN) signals caused by both independent and interactive defects located in the vicinity of the conductive filament (CF), which may alter the tunneling path and induce large stochastic current fluctuations. In addition, irreversible current changes, owing to trap density variations inside or near the CF, are also identified. Finally, the voltage dependence of the RTN phenomena and the occurrence of stress-induced complex fluctuations is evaluated.",

keywords = "HfO2, random telegraph noise (RTN), resistive random access memory (RRAM), unipolar switching, variability",

author = "Gonzalez, {Mireia Bargallo} and Javier Martin-Martinez and Marcos Maestro and Acero, {Mar{\'i}a Cruz} and Montserrat Nafr{\'i}a and Francesca Campabadal",

year = "2016",

month = jan,

day = "1",

doi = "10.1109/TED.2016.2583924",

language = "English",

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pages = "3116--3122",

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Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO<inf>2</inf>-Based RRAM. / Gonzalez, Mireia Bargallo; Martin-Martinez, Javier; Maestro, Marcos; Acero, María Cruz; Nafría, Montserrat; Campabadal, Francesca.

In: IEEE Transactions on Electron Devices, Vol. 63, No. 8, 7509614, 01.01.2016, p. 3116-3122.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM

AU - Gonzalez, Mireia Bargallo

AU - Martin-Martinez, Javier

AU - Maestro, Marcos

AU - Acero, María Cruz

AU - Nafría, Montserrat

AU - Campabadal, Francesca

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AB - © 1963-2012 IEEE. In this paper, the presence of filamentary current instabilities in the high resistance state of Ni/HfO2-based RRAM devices and their associated current fluctuations mechanisms are explored. After systematic measurements, the advanced weighted time-lag plot method is employed to accurately identify the contribution of multiple electrically active defects and to minimize the negative effect of the background noise. Special attention is given to the physical analysis of multilevel random telegraph noise (RTN) signals caused by both independent and interactive defects located in the vicinity of the conductive filament (CF), which may alter the tunneling path and induce large stochastic current fluctuations. In addition, irreversible current changes, owing to trap density variations inside or near the CF, are also identified. Finally, the voltage dependence of the RTN phenomena and the occurrence of stress-induced complex fluctuations is evaluated.

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KW - variability

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