Integrated tunneling sensor for nanoelectromechanical systems

S. Sadewasser, G. Abadal, N. Barniol, S. Dohn, A. Boisen, L. Fonseca, J. Est́ve

Research output: Contribution to journalArticleResearchpeer-review

6 Citations (Scopus)

Abstract

Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1 nm is essential, requiring the use of structures with a mobile electrode. At such small distances, attractive van der Waals and capillary forces become sizable, possibly resulting in snap-in of the electrodes. The authors present a comprehensive analysis and evaluation of the interplay between the involved forces and identify requirements for the design of tunneling sensors. Based on this analysis, a tunneling sensor is fabricated by Si micromachining technology and its proper operation is demonstrated. © 2006 American Institute of Physics.
Original languageEnglish
Article number173101
JournalApplied Physics Letters
Volume89
DOIs
Publication statusPublished - 6 Nov 2006

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