TY - JOUR
T1 - Integrated CMOS-MEMS with on-chip readout electronics for high-frequency applications
AU - Verd, J.
AU - Uranga, Arantxa
AU - Teva, J.
AU - López, J. L.
AU - Torres, F.
AU - Esteve, J.
AU - Abadal, G.
AU - Pérez-Murano, Frances
AU - Barniol, N.
PY - 2006/6/1
Y1 - 2006/6/1
N2 - A bridge-shaped first-lateral-mode 60-MHz mechanical resonator, which is monolithically integrated with capacitive CMOS readout electronics, is presented. The resonator is fabricated directly on a commercial CMOS technology using the top metal level as a structural layer. A maskless single-step wet-etching process for mechanical structure release after the standard CMOS integration process is the only postfabrication requirement. Electrical characterization of the electromechanical device demonstrates the feasibility of implementing a CMOS-microelectromechanical system for high-frequency applications using a standard conventional CMOS technology. © 2006 IEEE.
AB - A bridge-shaped first-lateral-mode 60-MHz mechanical resonator, which is monolithically integrated with capacitive CMOS readout electronics, is presented. The resonator is fabricated directly on a commercial CMOS technology using the top metal level as a structural layer. A maskless single-step wet-etching process for mechanical structure release after the standard CMOS integration process is the only postfabrication requirement. Electrical characterization of the electromechanical device demonstrates the feasibility of implementing a CMOS-microelectromechanical system for high-frequency applications using a standard conventional CMOS technology. © 2006 IEEE.
KW - CMOS-microelectromechanical system (MEMS)
KW - High-frequency resonators
KW - Integrated resonators
KW - Mechanical resonators
U2 - https://doi.org/10.1109/LED.2006.875147
DO - https://doi.org/10.1109/LED.2006.875147
M3 - Article
SN - 0741-3106
VL - 27
SP - 495
EP - 497
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
ER -