Integer quantum Hall effect in trilayer graphene

A. Kumar, W. Escoffier, J. M. Poumirol, C. Faugeras, D. P. Arovas, M. M. Fogler, F. Guinea, S. Roche, M. Goiran, B. Raquet

Research output: Contribution to journalArticleResearchpeer-review

80 Citations (Scopus)

Abstract

By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of ν=2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. The measured Hall resistivity plateaus are well reproduced theoretically, using a self-consistent Hartree calculations of the Landau levels and assuming an ABC stacking order of the three layers. © 2011 American Physical Society.
Original languageEnglish
Article number126806
JournalPhysical Review Letters
Volume107
Issue number12
DOIs
Publication statusPublished - 16 Sep 2011

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