Inkjet printed metal insulator semiconductor (MIS) diodes for organic and flexible electronic application

Kalyan Yoti Mitra; Christoph Sternkiker; Carme Martínez-Domingo; Enrico Sowade; Eloi Ramon; Jordi Carrabina; Henrique Leonel Gomes; Reinhard R. Baumann

doi:10.1088/2058-8585/2/1/015003

Inkjet printed metal insulator semiconductor (MIS) diodes for organic and flexible electronic application

Kalyan Yoti Mitra, Christoph Sternkiker, Carme Martínez-Domingo, Enrico Sowade, Eloi Ramon, Jordi Carrabina, Henrique Leonel Gomes, Reinhard R. Baumann

Research output: Contribution to journal › Article › Research › peer-review

16 Citations (Scopus)

Abstract

All inkjet printed rectifying diodes based on a metal-insulator-semiconductor (MIS) layer stack are presented. The rectifying properties were optimized by careful selection of the insulator interlayer thickness and the layout structure. The different diode architectures based on the following materials are investigated: (1) silver/poly (methylmethacrylate-methacrylic acid)/polytriarylamine/silver, (2) silver/polytriarylamine/poly (methylmethacrylate-methacrylic acid)/silver, and (3) silver/poly (methylmethacrylate-methacrylic acid)/poly-triarylamine/poly(3, 4-ethylenedioxythiophene) poly (styrenesulfonate). The MIS diodes show an averaged rectification ratio of 200 and reasonable forward current density reaching 40 mA cm-2. They are suitable for a number of applications in flexible printed organic electronics.

Original language	English
Article number	015003
Journal	Flexible and printed electronics
Volume	2
Issue number	1
DOIs	https://doi.org/10.1088/2058-8585/2/1/015003
Publication status	Published - 1 Mar 2017

Keywords

Barrier layers
Diodes
Inkjet printing
Printed electronics

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10.1088/2058-8585/2/1/015003

Cite this

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title = "Inkjet printed metal insulator semiconductor (MIS) diodes for organic and flexible electronic application",

abstract = "All inkjet printed rectifying diodes based on a metal-insulator-semiconductor (MIS) layer stack are presented. The rectifying properties were optimized by careful selection of the insulator interlayer thickness and the layout structure. The different diode architectures based on the following materials are investigated: (1) silver/poly (methylmethacrylate-methacrylic acid)/polytriarylamine/silver, (2) silver/polytriarylamine/poly (methylmethacrylate-methacrylic acid)/silver, and (3) silver/poly (methylmethacrylate-methacrylic acid)/poly-triarylamine/poly(3, 4-ethylenedioxythiophene) poly (styrenesulfonate). The MIS diodes show an averaged rectification ratio of 200 and reasonable forward current density reaching 40 mA cm-2. They are suitable for a number of applications in flexible printed organic electronics.",

keywords = "Barrier layers, Diodes, Inkjet printing, Printed electronics",

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T1 - Inkjet printed metal insulator semiconductor (MIS) diodes for organic and flexible electronic application

AU - Mitra, Kalyan Yoti

AU - Sternkiker, Christoph

AU - Martínez-Domingo, Carme

AU - Sowade, Enrico

AU - Ramon, Eloi

AU - Carrabina, Jordi

AU - Gomes, Henrique Leonel

AU - Baumann, Reinhard R.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - All inkjet printed rectifying diodes based on a metal-insulator-semiconductor (MIS) layer stack are presented. The rectifying properties were optimized by careful selection of the insulator interlayer thickness and the layout structure. The different diode architectures based on the following materials are investigated: (1) silver/poly (methylmethacrylate-methacrylic acid)/polytriarylamine/silver, (2) silver/polytriarylamine/poly (methylmethacrylate-methacrylic acid)/silver, and (3) silver/poly (methylmethacrylate-methacrylic acid)/poly-triarylamine/poly(3, 4-ethylenedioxythiophene) poly (styrenesulfonate). The MIS diodes show an averaged rectification ratio of 200 and reasonable forward current density reaching 40 mA cm-2. They are suitable for a number of applications in flexible printed organic electronics.

AB - All inkjet printed rectifying diodes based on a metal-insulator-semiconductor (MIS) layer stack are presented. The rectifying properties were optimized by careful selection of the insulator interlayer thickness and the layout structure. The different diode architectures based on the following materials are investigated: (1) silver/poly (methylmethacrylate-methacrylic acid)/polytriarylamine/silver, (2) silver/polytriarylamine/poly (methylmethacrylate-methacrylic acid)/silver, and (3) silver/poly (methylmethacrylate-methacrylic acid)/poly-triarylamine/poly(3, 4-ethylenedioxythiophene) poly (styrenesulfonate). The MIS diodes show an averaged rectification ratio of 200 and reasonable forward current density reaching 40 mA cm-2. They are suitable for a number of applications in flexible printed organic electronics.

KW - Barrier layers

KW - Diodes

KW - Inkjet printing

KW - Printed electronics

U2 - 10.1088/2058-8585/2/1/015003

DO - 10.1088/2058-8585/2/1/015003

M3 - Article

VL - 2

IS - 1

M1 - 015003

ER -

Inkjet printed metal insulator semiconductor (MIS) diodes for organic and flexible electronic application

Abstract

Keywords

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