Inkjet printed HfO<inf>2</inf>-based ReRAMs: First demonstration and performance characterization

G. Vescio, A. Crespo-Yepes, D. Alonso, S. Claramunt, M. Porti, R. Rodriguez, A. Cornet, A. Cirera, M. Nafria, X. Aymerich

Research output: Contribution to journalArticleResearchpeer-review

14 Citations (Scopus)


© 1980-2012 IEEE. In this letter we demonstrate for the first time, the implementation of inkjet-printed high-performance ReRAM devices based on the high-k HfO2 dielectric. Features such as high on/off current ratio and low switching voltages pave the way for low power applications. These characteristics, along with the known flexible properties of the inkjet-printed dielectric layer, make this kind of ReRAMs suitable for portable devices that do not require large integration density i.e. low density nonvolatile memories or reconfigurable analog circuits.
Original languageEnglish
Article number7855705
Pages (from-to)457-460
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 1 Apr 2017


  • cost-competitive technology
  • flexible devices
  • Inkjet printed technology
  • low power applications
  • ReRAM
  • resistive switching


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