Abstract
© 1980-2012 IEEE. In this letter we demonstrate for the first time, the implementation of inkjet-printed high-performance ReRAM devices based on the high-k HfO2 dielectric. Features such as high on/off current ratio and low switching voltages pave the way for low power applications. These characteristics, along with the known flexible properties of the inkjet-printed dielectric layer, make this kind of ReRAMs suitable for portable devices that do not require large integration density i.e. low density nonvolatile memories or reconfigurable analog circuits.
Original language | English |
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Article number | 7855705 |
Pages (from-to) | 457-460 |
Journal | IEEE Electron Device Letters |
Volume | 38 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Apr 2017 |
Keywords
- cost-competitive technology
- flexible devices
- Inkjet printed technology
- low power applications
- ReRAM
- resistive switching