Inkjet printed HfO<inf>2</inf>-based ReRAMs: First demonstration and performance characterization

G. Vescio; A. Crespo-Yepes; D. Alonso; S. Claramunt; M. Porti; R. Rodriguez; A. Cornet; A. Cirera; M. Nafria; X. Aymerich

doi:10.1109/LED.2017.2668599

Inkjet printed HfO<inf>2</inf>-based ReRAMs: First demonstration and performance characterization

G. Vescio, A. Crespo-Yepes, D. Alonso, S. Claramunt, M. Porti, R. Rodriguez, A. Cornet, A. Cirera, M. Nafria, X. Aymerich

Research output: Contribution to journal › Article › Research › peer-review

10 Citations (Scopus)

Abstract

© 1980-2012 IEEE. In this letter we demonstrate for the first time, the implementation of inkjet-printed high-performance ReRAM devices based on the high-k HfO2 dielectric. Features such as high on/off current ratio and low switching voltages pave the way for low power applications. These characteristics, along with the known flexible properties of the inkjet-printed dielectric layer, make this kind of ReRAMs suitable for portable devices that do not require large integration density i.e. low density nonvolatile memories or reconfigurable analog circuits.

Original language	English
Article number	7855705
Pages (from-to)	457-460
Journal	IEEE Electron Device Letters
Volume	38
Issue number	4
DOIs	https://doi.org/10.1109/LED.2017.2668599
Publication status	Published - 1 Apr 2017

Keywords

cost-competitive technology
flexible devices
Inkjet printed technology
low power applications
ReRAM
resistive switching

Access to Document

10.1109/LED.2017.2668599

Fingerprint Dive into the research topics of 'Inkjet printed HfO<inf>2</inf>-based ReRAMs: First demonstration and performance characterization'. Together they form a unique fingerprint.

Cite this

@article{0dca04f1bdb34b7ba95ec954ca901e7f,

title = "Inkjet printed HfO2-based ReRAMs: First demonstration and performance characterization",

abstract = "{\textcopyright} 1980-2012 IEEE. In this letter we demonstrate for the first time, the implementation of inkjet-printed high-performance ReRAM devices based on the high-k HfO2 dielectric. Features such as high on/off current ratio and low switching voltages pave the way for low power applications. These characteristics, along with the known flexible properties of the inkjet-printed dielectric layer, make this kind of ReRAMs suitable for portable devices that do not require large integration density i.e. low density nonvolatile memories or reconfigurable analog circuits.",

keywords = "cost-competitive technology, flexible devices, Inkjet printed technology, low power applications, ReRAM, resistive switching",

author = "G. Vescio and A. Crespo-Yepes and D. Alonso and S. Claramunt and M. Porti and R. Rodriguez and A. Cornet and A. Cirera and M. Nafria and X. Aymerich",

year = "2017",

month = apr,

day = "1",

doi = "10.1109/LED.2017.2668599",

language = "English",

volume = "38",

pages = "457--460",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

Inkjet printed HfO<inf>2</inf>-based ReRAMs: First demonstration and performance characterization. / Vescio, G.; Crespo-Yepes, A.; Alonso, D.; Claramunt, S.; Porti, M.; Rodriguez, R.; Cornet, A.; Cirera, A.; Nafria, M.; Aymerich, X.

In: IEEE Electron Device Letters, Vol. 38, No. 4, 7855705, 01.04.2017, p. 457-460.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Inkjet printed HfO2-based ReRAMs: First demonstration and performance characterization

AU - Vescio, G.

AU - Crespo-Yepes, A.

AU - Alonso, D.

AU - Claramunt, S.

AU - Porti, M.

AU - Rodriguez, R.

AU - Cornet, A.

AU - Cirera, A.

AU - Nafria, M.

AU - Aymerich, X.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - © 1980-2012 IEEE. In this letter we demonstrate for the first time, the implementation of inkjet-printed high-performance ReRAM devices based on the high-k HfO2 dielectric. Features such as high on/off current ratio and low switching voltages pave the way for low power applications. These characteristics, along with the known flexible properties of the inkjet-printed dielectric layer, make this kind of ReRAMs suitable for portable devices that do not require large integration density i.e. low density nonvolatile memories or reconfigurable analog circuits.

AB - © 1980-2012 IEEE. In this letter we demonstrate for the first time, the implementation of inkjet-printed high-performance ReRAM devices based on the high-k HfO2 dielectric. Features such as high on/off current ratio and low switching voltages pave the way for low power applications. These characteristics, along with the known flexible properties of the inkjet-printed dielectric layer, make this kind of ReRAMs suitable for portable devices that do not require large integration density i.e. low density nonvolatile memories or reconfigurable analog circuits.

KW - cost-competitive technology

KW - flexible devices

KW - Inkjet printed technology

KW - low power applications

KW - ReRAM

KW - resistive switching

U2 - 10.1109/LED.2017.2668599

DO - 10.1109/LED.2017.2668599

M3 - Article

VL - 38

SP - 457

EP - 460

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 4

M1 - 7855705

ER -