Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric

Albert Crespo-Yepes; Javier Martin-Martinez; Aude Rothschild; Rosana Rodriguez; Montserrat Nafria; Xavier Aymerich

doi:https://doi.org/10.1109/TDMR.2010.2098032

Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric

Albert Crespo-Yepes, Javier Martin-Martinez, Aude Rothschild, Rosana Rodriguez, Montserrat Nafria, Xavier Aymerich

Research output: Contribution to journal › Article › Research › peer-review

3 Citations (Scopus)

Abstract

The injected charge to recovery QR is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- khafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed. © 2006 IEEE.

Original language	English
Article number	5638618
Pages (from-to)	126-130
Journal	IEEE Transactions on Device and Materials Reliability
Volume	11
DOIs	https://doi.org/10.1109/TDMR.2010.2098032
Publication status	Published - 1 Mar 2011

Keywords

BD reversibility
CMOS
dielectric breakdown (BD)
high-κ
reliability
resistive switching (RS)

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@article{63cd67fe73074792a9ac3d43a8f8492a,

title = "Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric",

abstract = "The injected charge to recovery QR is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- khafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed. {\textcopyright} 2006 IEEE.",

keywords = "BD reversibility, CMOS, dielectric breakdown (BD), high-κ, reliability, resistive switching (RS)",

author = "Albert Crespo-Yepes and Javier Martin-Martinez and Aude Rothschild and Rosana Rodriguez and Montserrat Nafria and Xavier Aymerich",

year = "2011",

month = mar,

day = "1",

doi = "https://doi.org/10.1109/TDMR.2010.2098032",

language = "English",

volume = "11",

pages = "126--130",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric. / Crespo-Yepes, Albert ; Martin-Martinez, Javier; Rothschild, Aude; Rodriguez, Rosana ; Nafria, Montserrat ; Aymerich, Xavier.

In: IEEE Transactions on Device and Materials Reliability, Vol. 11, 5638618, 01.03.2011, p. 126-130.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric

AU - Crespo-Yepes, Albert

AU - Martin-Martinez, Javier

AU - Rothschild, Aude

AU - Rodriguez, Rosana

AU - Nafria, Montserrat

AU - Aymerich, Xavier

PY - 2011/3/1

Y1 - 2011/3/1

N2 - The injected charge to recovery QR is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- khafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed. © 2006 IEEE.

AB - The injected charge to recovery QR is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- khafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed. © 2006 IEEE.

KW - BD reversibility

KW - CMOS

KW - dielectric breakdown (BD)

KW - high-κ

KW - reliability

KW - resistive switching (RS)

UR - https://ddd.uab.cat/record/138450

U2 - https://doi.org/10.1109/TDMR.2010.2098032

DO - https://doi.org/10.1109/TDMR.2010.2098032

M3 - Article

VL - 11

SP - 126

EP - 130

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

SN - 1530-4388

M1 - 5638618

ER -