Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric

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Abstract

The injected charge to recovery QR is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- khafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed. © 2006 IEEE.
Original languageEnglish
Article number5638618
Pages (from-to)126-130
JournalIEEE Transactions on Device and Materials Reliability
Volume11
DOIs
Publication statusPublished - 1 Mar 2011

Keywords

  • BD reversibility
  • CMOS
  • dielectric breakdown (BD)
  • high-κ
  • reliability
  • resistive switching (RS)

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