TY - JOUR
T1 - Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric
AU - Crespo-Yepes, Albert
AU - Martin-Martinez, Javier
AU - Rothschild, Aude
AU - Rodriguez, Rosana
AU - Nafria, Montserrat
AU - Aymerich, Xavier
PY - 2011/3/1
Y1 - 2011/3/1
N2 - The injected charge to recovery QR is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- khafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed. © 2006 IEEE.
AB - The injected charge to recovery QR is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- khafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed. © 2006 IEEE.
KW - BD reversibility
KW - CMOS
KW - dielectric breakdown (BD)
KW - high-κ
KW - reliability
KW - resistive switching (RS)
UR - https://ddd.uab.cat/record/138450
U2 - https://doi.org/10.1109/TDMR.2010.2098032
DO - https://doi.org/10.1109/TDMR.2010.2098032
M3 - Article
VL - 11
SP - 126
EP - 130
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
SN - 1530-4388
M1 - 5638618
ER -