The injected charge to recovery QR is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- khafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed. © 2006 IEEE.
|Journal||IEEE Transactions on Device and Materials Reliability|
|Publication status||Published - 1 Mar 2011|
- BD reversibility
- dielectric breakdown (BD)
- resistive switching (RS)