The carbonization and epitaxial growth of cubic SiC films on Si(100) substrates using C2H2 and solid Si sources has been investigated by means of infra-red Fourier transform spectroscopy. The carbonization of the Si surface is performed under continuous C2H2 flux in two steps: an ordinary process, plus an increase of the substrate temperature to its final value. Subsequent epitaxial films were grown under simultaneous supply of elemental Si and C2H2 gas beam. Infra-red reflectivity spectra of samples under different conditions are reported and permit the direct verification for the presence of SiC in carbonized layers, measure the thickness of the films and evaluate their quality. © 1997 Elsevier Science S.A.
- Carbonization of SiC layers
- Epitaxial SiC films
- Gas-MBE growth
- IR reflectivity
El Mekki, M. B., Pascual, J., Androulidaki, M., Zekentes, K., Camassel, J., & Stoemenos, J. (1997). Infra-red characterization of carbonization of Si surfaces by gas source molecular beam epitaxy. Diamond and Related Materials, 6, 1772-1776. https://doi.org/10.1016/S0925-9635(97)00138-6