Influence of Vacuum Environment on Conductive AFM measurements of advanced MOS Gate dielectrics

L. Aguilera, W. Polspoel, A. Volodin, C. Van Haesendonck, M. Porti, W. Vandervorst, M. Nafria, X. Aymerich

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	1445-1449
Journal	Journal of Vacuum Science & Technology. B,
Volume	26
Issue number	4
Publication status	Published - 1 Jan 2008

Cite this

@article{fdcb3a43f56f4b8d905fce1375d21584,

title = "Influence of Vacuum Environment on Conductive AFM measurements of advanced MOS Gate dielectrics",

author = "L. Aguilera and W. Polspoel and A. Volodin and Haesendonck, {C. Van} and M. Porti and W. Vandervorst and M. Nafria and X. Aymerich",

year = "2008",

month = jan,

day = "1",

language = "English",

volume = "26",

pages = "1445--1449",

journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",

issn = "0734-211X",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Influence of Vacuum Environment on Conductive AFM measurements of advanced MOS Gate dielectrics

AU - Aguilera, L.

AU - Polspoel, W.

AU - Volodin, A.

AU - Haesendonck, C. Van

AU - Porti, M.

AU - Vandervorst, W.

AU - Nafria, M.

AU - Aymerich, X.

PY - 2008/1/1

Y1 - 2008/1/1

M3 - Article

VL - 26

SP - 1445

EP - 1449

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 0734-211X

IS - 4

ER -