Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high-k stacks observed with CAFM

M. Lanza, M. Porti, M. Nafria, G. Benstetter, W. Frammelsberger, H. Ranzinger, E. Lodermeier, G. Jaschke

Research output: Contribution to journalArticleResearchpeer-review

27 Citations (Scopus)

Abstract

In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current-voltage (I-V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive. © 2007 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)1424-1428
JournalMicroelectronics Reliability
Volume47
DOIs
Publication statusPublished - 1 Aug 2007

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