Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high-k stacks observed with CAFM

M. Lanza; M. Porti; M. Nafria; G. Benstetter; W. Frammelsberger; H. Ranzinger; E. Lodermeier; G. Jaschke

doi:https://doi.org/10.1016/j.microrel.2007.07.045

Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high-k stacks observed with CAFM

M. Lanza, M. Porti, M. Nafria, G. Benstetter, W. Frammelsberger, H. Ranzinger, E. Lodermeier, G. Jaschke

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

28 Citations (Scopus)

Abstract

In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current-voltage (I-V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive. © 2007 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	1424-1428
Journal	Microelectronics Reliability
Volume	47
DOIs	https://doi.org/10.1016/j.microrel.2007.07.045
Publication status	Published - 1 Aug 2007

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title = "Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high-k stacks observed with CAFM",

abstract = "In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current-voltage (I-V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive. {\textcopyright} 2007 Elsevier Ltd. All rights reserved.",

author = "M. Lanza and M. Porti and M. Nafria and G. Benstetter and W. Frammelsberger and H. Ranzinger and E. Lodermeier and G. Jaschke",

year = "2007",

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doi = "https://doi.org/10.1016/j.microrel.2007.07.045",

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T1 - Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high-k stacks observed with CAFM

AU - Lanza, M.

AU - Porti, M.

AU - Nafria, M.

AU - Benstetter, G.

AU - Frammelsberger, W.

AU - Ranzinger, H.

AU - Lodermeier, E.

AU - Jaschke, G.

PY - 2007/8/1

Y1 - 2007/8/1

N2 - In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current-voltage (I-V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive. © 2007 Elsevier Ltd. All rights reserved.

AB - In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current-voltage (I-V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive. © 2007 Elsevier Ltd. All rights reserved.

U2 - https://doi.org/10.1016/j.microrel.2007.07.045

DO - https://doi.org/10.1016/j.microrel.2007.07.045

M3 - Article

SN - 0026-2714

VL - 47

SP - 1424

EP - 1428

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high-k stacks observed with CAFM

Abstract

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