Influence of the epitaxial layer on the current-voltage characteristics in high voltage VDMOS devices. Analysis of the quasi-saturation point

J. Rebollo, J. Millán, J. Paredes, E. Lora-Tamayo, F. Serra-Mestres

Research output: Contribution to journalArticleResearchpeer-review

Abstract

In this paper, the influence of the epitaxial layer on the current-voltage characteristics, lD(VD), for high voltage VDMOS (vertical double-diffused MOS transistor devices) is analyzed. The quasi-saturation point of the lD(VD) curve and its evolution with the drain bias are studied. The epitaxial layer resistance is considered in the saturation and quasi-saturation operation modes. © 1987.
Original languageEnglish
Pages (from-to)399-401
JournalVacuum
Volume37
DOIs
Publication statusPublished - 1 Jan 1987

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