Influence of the epitaxial layer on the current-voltage characteristics in high voltage VDMOS devices. Analysis of the quasi-saturation point

J. Rebollo; J. Millán; J. Paredes; E. Lora-Tamayo; F. Serra-Mestres

doi:https://doi.org/10.1016/0042-207X(87)90320-4

Influence of the epitaxial layer on the current-voltage characteristics in high voltage VDMOS devices. Analysis of the quasi-saturation point

J. Rebollo, J. Millán, J. Paredes, E. Lora-Tamayo, F. Serra-Mestres

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

Abstract

In this paper, the influence of the epitaxial layer on the current-voltage characteristics, lD(VD), for high voltage VDMOS (vertical double-diffused MOS transistor devices) is analyzed. The quasi-saturation point of the lD(VD) curve and its evolution with the drain bias are studied. The epitaxial layer resistance is considered in the saturation and quasi-saturation operation modes. © 1987.

Original language	English
Pages (from-to)	399-401
Journal	Vacuum
Volume	37
DOIs	https://doi.org/10.1016/0042-207X(87)90320-4
Publication status	Published - 1 Jan 1987

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title = "Influence of the epitaxial layer on the current-voltage characteristics in high voltage VDMOS devices. Analysis of the quasi-saturation point",

abstract = "In this paper, the influence of the epitaxial layer on the current-voltage characteristics, lD(VD), for high voltage VDMOS (vertical double-diffused MOS transistor devices) is analyzed. The quasi-saturation point of the lD(VD) curve and its evolution with the drain bias are studied. The epitaxial layer resistance is considered in the saturation and quasi-saturation operation modes. {\textcopyright} 1987.",

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AU - Rebollo, J.

AU - Millán, J.

AU - Paredes, J.

AU - Lora-Tamayo, E.

AU - Serra-Mestres, F.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - In this paper, the influence of the epitaxial layer on the current-voltage characteristics, lD(VD), for high voltage VDMOS (vertical double-diffused MOS transistor devices) is analyzed. The quasi-saturation point of the lD(VD) curve and its evolution with the drain bias are studied. The epitaxial layer resistance is considered in the saturation and quasi-saturation operation modes. © 1987.

AB - In this paper, the influence of the epitaxial layer on the current-voltage characteristics, lD(VD), for high voltage VDMOS (vertical double-diffused MOS transistor devices) is analyzed. The quasi-saturation point of the lD(VD) curve and its evolution with the drain bias are studied. The epitaxial layer resistance is considered in the saturation and quasi-saturation operation modes. © 1987.

U2 - https://doi.org/10.1016/0042-207X(87)90320-4

DO - https://doi.org/10.1016/0042-207X(87)90320-4

M3 - Article

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SP - 399

EP - 401

JO - Vacuum

JF - Vacuum

SN - 0042-207X

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