Abstract
In this paper, the influence of the epitaxial layer on the current-voltage characteristics, lD(VD), for high voltage VDMOS (vertical double-diffused MOS transistor devices) is analyzed. The quasi-saturation point of the lD(VD) curve and its evolution with the drain bias are studied. The epitaxial layer resistance is considered in the saturation and quasi-saturation operation modes. © 1987.
Original language | English |
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Pages (from-to) | 399-401 |
Journal | Vacuum |
Volume | 37 |
DOIs | |
Publication status | Published - 1 Jan 1987 |