Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	861-864
Journal	Microelectronic Reliability
Volume	45
Issue number	5-6
DOIs	https://doi.org/10.1016/j.microrel.2004.10.029
Publication status	Published - 1 Jan 2005

Access to Document

@article{4ec0f5b125ee41eb8ebbf8b4ed117ca5,

title = "Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics",

author = "R. Fern{\'a}ndez and R. Rodr{\'i}guez and M. Nafria and X. Aymerich",

year = "2005",

month = jan,

day = "1",

doi = "10.1016/j.microrel.2004.10.029",

language = "English",

volume = "45",

pages = "861--864",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "5-6",

}

TY - JOUR

T1 - Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics

AU - Fernández, R.

AU - Rodríguez, R.

AU - Nafria, M.

AU - Aymerich, X.

PY - 2005/1/1

Y1 - 2005/1/1

U2 - 10.1016/j.microrel.2004.10.029

DO - 10.1016/j.microrel.2004.10.029

M3 - Article

VL - 45

SP - 861

EP - 864

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 5-6

ER -