Original language | English |
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Pages (from-to) | 861-864 |
Journal | Microelectronic Reliability |
Volume | 45 |
Issue number | 5-6 |
DOIs | |
Publication status | Published - 1 Jan 2005 |
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics
R. Fernández, R. Rodríguez, M. Nafria, X. Aymerich
Research output: Contribution to journal › Article › Research
4
Citations
(Scopus)