Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO<inf>2</inf> films

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    Abstract

    The effects on the oxide degradation of a low field of opposite polarity to that used during the stress have been analysed. Two different methods have been used: the analysis of stress-induced leakage current data and a recently proposed two-step stress method. The last procedure suggests a relaxation of the degradation process. © 2001 Elsevier Science Ltd. All rights reserved.
    Original languageEnglish
    Pages (from-to)1011-1013
    JournalMicroelectronics Reliability
    Volume41
    DOIs
    Publication statusPublished - 1 Jan 2001

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