In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker, Mario Lanza

Research output: Contribution to journalArticleResearchpeer-review

10 Citations (Scopus)
Original languageEnglish
Article number1400058
JournalAdvanced Electronic Materials
Volume1
Issue number4
DOIs
Publication statusPublished - 1 Jan 2015

Keywords

  • conductive atomic force microscope
  • conductive filament
  • grain boundaries
  • mechanical stress
  • resistive switching

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