In-plane thermal conductivity of sub-20 nm thick suspended mono-crystalline Si layers

P. Ferrando-Villalba, A. F. Lopeandia, Ll Abad, J. Llobet, M. Molina-Ruiz, G. Garcia, M. Gerbolés, F. X. Alvarez, A. R. Goñi, F. J. Muñoz-Pascual, J. Rodríguez-Viejo

Research output: Contribution to journalArticleResearchpeer-review

26 Citations (Scopus)


We measure the thermal conductivity of a 17.5-nm-thick single crystalline Si layer by using a suspended structure developed from a silicon-on-insulator wafer, in which the Si layer bridges the suspended platforms. The obtained value of 19 Wm-1 K-1 at room temperature represents a tenfold reduction with respect to bulk Si. This design paves the way for subsequent lateral nanostructuration of the layer with lithographic techniques, to define different geometries such as Si nanowires, nanostrips or phononic grids. As a proof of concept, nanostrips of 0.5 ש2014 IOP Publishing Ltd Printed in the UK.
Original languageEnglish
Article number185402
Publication statusPublished - 9 May 2014


  • microfabrication
  • semiconductors
  • thermal conductivity
  • thin films

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