Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling

A. Benali, F. L. Traversa, G. Albareda, M. Aghoutane, X. Oriols

Research output: Contribution to journalArticleResearchpeer-review

12 Citations (Scopus)

Abstract

Progress in high-frequency transistors is based on reducing electron transit time, either by scaling their lengths or by introducing materials with higher electron mobility. For gate-all-around quantum-wire transistors with lateral dimensions similar or smaller than their length, a careful analysis of the displacement current reveals that a time shorter than the transit time controls their high-frequency performance. Monte Carlo simulations of such transistors with a self-consistent solution of the 3D Poisson equation clearly show an improvement of the intrinsic cut-off frequency when their lateral areas are reduced, without length scaling. © 2013 AIP Publishing LLC.
Original languageEnglish
Article number173506
JournalApplied Physics Letters
Volume102
Issue number17
DOIs
Publication statusPublished - 29 Apr 2013

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