Abstract
Progress in high-frequency transistors is based on reducing electron transit time, either by scaling their lengths or by introducing materials with higher electron mobility. For gate-all-around quantum-wire transistors with lateral dimensions similar or smaller than their length, a careful analysis of the displacement current reveals that a time shorter than the transit time controls their high-frequency performance. Monte Carlo simulations of such transistors with a self-consistent solution of the 3D Poisson equation clearly show an improvement of the intrinsic cut-off frequency when their lateral areas are reduced, without length scaling. © 2013 AIP Publishing LLC.
Original language | English |
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Article number | 173506 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 17 |
DOIs | |
Publication status | Published - 29 Apr 2013 |