Abstract
A new configuration of conductive atomic force microscope (CAFM) is presented, which is based in a standard CAFM where the typical I-V converter has been replaced by a log I-V amplifier. This substitution extends the current dynamic range from 1-100 pA to 1 pA-1 mA. With the broadening of the current dynamic range, the CAFM can access new applications, such as the reliability evaluation of metal-oxide-semiconductor gate dielectrics. As an example, the setup has been tested by analyzing breakdown spots induced in Si O2 layers. © 2008 American Institute of Physics.
| Original language | English |
|---|---|
| Article number | 073701 |
| Journal | Review of Scientific Instruments |
| Volume | 79 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 15 Aug 2008 |
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