Implanted and irradiated SiO2/Si structures electrical properties at the nanoscale

M. Porti, M. Nafría, S. Gerardin, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini

Research output: Contribution to journal › Article › Research › peer-review

Original language	English
Pages (from-to)	421-425
Journal	Journal of vacuum science & technology. B
Volume	27
Issue number	1
Publication status	Published - 1 Jan 2009

Cite this

@article{50367028fe4142e28f30ce950e557a97,

title = "Implanted and irradiated SiO2/Si structures electrical properties at the nanoscale",

author = "M. Porti and M. Nafr{\'i}a and S. Gerardin and X. Aymerich and A. Cester and A. Paccagnella and G. Ghidini",

year = "2009",

month = jan,

day = "1",

language = "English",

volume = "27",

pages = "421--425",

journal = "Journal of vacuum science & technology. B",

issn = "0734-211X",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Implanted and irradiated SiO2/Si structures electrical properties at the nanoscale

AU - Porti, M.

AU - Nafría, M.

AU - Gerardin, S.

AU - Aymerich, X.

AU - Cester, A.

AU - Paccagnella, A.

AU - Ghidini, G.

PY - 2009/1/1

Y1 - 2009/1/1

M3 - Article

SN - 0734-211X

VL - 27

SP - 421

EP - 425

JO - Journal of vacuum science & technology. B

JF - Journal of vacuum science & technology. B

IS - 1

ER -