Implanted and irradiated Si O2 Si structure electrical properties at the nanoscale

M. Porti, N. Nafria, S. Gerardin, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini

Research output: Contribution to journalArticleResearchpeer-review

Abstract

In this work, a conductive atomic force microscope (C-AFM), a scanning capacitance microscope (SCM), and a kelvin probe force microscope (KPFM) have been used to qualitatively study at the nanoscale the electrical properties of irradiated and implanted gate oxides of metal-oxide-semiconductor structures. These techniques have allowed to investigate the electrical conduction (C-AFM) and the presence of charge (SCM and KPFM) in the oxide of the analyzed structures. The impact of the energy of the impinging ions has also been qualitatively evaluated. © 2009 American Vacuum Society.
Original languageEnglish
Pages (from-to)421-425
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number1
DOIs
Publication statusPublished - 17 Feb 2009

Fingerprint Dive into the research topics of 'Implanted and irradiated Si O2 Si structure electrical properties at the nanoscale'. Together they form a unique fingerprint.

Cite this