Implanted and irradiated Si O2 Si structure electrical properties at the nanoscale

M. Porti; N. Nafria; S. Gerardin; X. Aymerich; A. Cester; A. Paccagnella; G. Ghidini

doi:10.1116/1.3043475

Implanted and irradiated Si O2 Si structure electrical properties at the nanoscale

M. Porti, N. Nafria, S. Gerardin, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

Abstract

In this work, a conductive atomic force microscope (C-AFM), a scanning capacitance microscope (SCM), and a kelvin probe force microscope (KPFM) have been used to qualitatively study at the nanoscale the electrical properties of irradiated and implanted gate oxides of metal-oxide-semiconductor structures. These techniques have allowed to investigate the electrical conduction (C-AFM) and the presence of charge (SCM and KPFM) in the oxide of the analyzed structures. The impact of the energy of the impinging ions has also been qualitatively evaluated. © 2009 American Vacuum Society.

Original language	English
Pages (from-to)	421-425
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3043475
Publication status	Published - 17 Feb 2009

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@article{57fb2668a99e4400844a352e78105588,

title = "Implanted and irradiated Si O2 Si structure electrical properties at the nanoscale",

abstract = "In this work, a conductive atomic force microscope (C-AFM), a scanning capacitance microscope (SCM), and a kelvin probe force microscope (KPFM) have been used to qualitatively study at the nanoscale the electrical properties of irradiated and implanted gate oxides of metal-oxide-semiconductor structures. These techniques have allowed to investigate the electrical conduction (C-AFM) and the presence of charge (SCM and KPFM) in the oxide of the analyzed structures. The impact of the energy of the impinging ions has also been qualitatively evaluated. {\textcopyright} 2009 American Vacuum Society.",

author = "M. Porti and N. Nafria and S. Gerardin and X. Aymerich and A. Cester and A. Paccagnella and G. Ghidini",

year = "2009",

month = feb,

day = "17",

doi = "10.1116/1.3043475",

language = "English",

volume = "27",

pages = "421--425",

number = "1",

}

TY - JOUR

T1 - Implanted and irradiated Si O2 Si structure electrical properties at the nanoscale

AU - Porti, M.

AU - Nafria, N.

AU - Gerardin, S.

AU - Aymerich, X.

AU - Cester, A.

AU - Paccagnella, A.

AU - Ghidini, G.

PY - 2009/2/17

Y1 - 2009/2/17

N2 - In this work, a conductive atomic force microscope (C-AFM), a scanning capacitance microscope (SCM), and a kelvin probe force microscope (KPFM) have been used to qualitatively study at the nanoscale the electrical properties of irradiated and implanted gate oxides of metal-oxide-semiconductor structures. These techniques have allowed to investigate the electrical conduction (C-AFM) and the presence of charge (SCM and KPFM) in the oxide of the analyzed structures. The impact of the energy of the impinging ions has also been qualitatively evaluated. © 2009 American Vacuum Society.

AB - In this work, a conductive atomic force microscope (C-AFM), a scanning capacitance microscope (SCM), and a kelvin probe force microscope (KPFM) have been used to qualitatively study at the nanoscale the electrical properties of irradiated and implanted gate oxides of metal-oxide-semiconductor structures. These techniques have allowed to investigate the electrical conduction (C-AFM) and the presence of charge (SCM and KPFM) in the oxide of the analyzed structures. The impact of the energy of the impinging ions has also been qualitatively evaluated. © 2009 American Vacuum Society.

U2 - 10.1116/1.3043475

DO - 10.1116/1.3043475

M3 - Article

VL - 27

SP - 421

EP - 425

IS - 1

ER -

Implanted and irradiated Si O2 Si structure electrical properties at the nanoscale

Abstract

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