In this work, a conductive atomic force microscope (C-AFM), a scanning capacitance microscope (SCM), and a kelvin probe force microscope (KPFM) have been used to qualitatively study at the nanoscale the electrical properties of irradiated and implanted gate oxides of metal-oxide-semiconductor structures. These techniques have allowed to investigate the electrical conduction (C-AFM) and the presence of charge (SCM and KPFM) in the oxide of the analyzed structures. The impact of the energy of the impinging ions has also been qualitatively evaluated. © 2009 American Vacuum Society.
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 17 Feb 2009|