Impact of vacancies on diffusive and pseudodiffusive electronic transport in graphene

Alessandro Cresti, Thibaud Louvet, Frank Ortmann, Dinh Van Tuan, Paweł Lenarczyk, Georg Huhs, Stephan Roche

    Research output: Contribution to journalArticleResearchpeer-review

    3 Citations (Scopus)

    Abstract

    We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. Quantum transmission shows a variety of different behaviours, which depend on the specific system geometry and disorder distribution. The investigation of the scaling laws of the most significant quantities allows a deep physical insight and the accurate prediction of their trend over a large energy region around the Dirac point. © 2013 by the authors; licensee MDPI, Basel, Switzerland.
    Original languageEnglish
    Pages (from-to)289-305
    JournalCrystals
    Volume3
    Issue number2
    DOIs
    Publication statusPublished - 8 Apr 2013

    Keywords

    • Graphene
    • Quantum transport
    • Vacancies

    Fingerprint Dive into the research topics of 'Impact of vacancies on diffusive and pseudodiffusive electronic transport in graphene'. Together they form a unique fingerprint.

  • Cite this

    Cresti, A., Louvet, T., Ortmann, F., Van Tuan, D., Lenarczyk, P., Huhs, G., & Roche, S. (2013). Impact of vacancies on diffusive and pseudodiffusive electronic transport in graphene. Crystals, 3(2), 289-305. https://doi.org/10.3390/cryst3020289