Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors

M. Saludes-Tapia; F. Campabadal; E. Miranda; M. B. González

doi:10.1016/j.sse.2023.108718

Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO₂/W memristors

M. Saludes-Tapia^*, F. Campabadal, E. Miranda, M. B. González

^*Corresponding author for this work

Department of Electronic Engineering

Campus UAB

Research output: Contribution to journal › Article › Research › peer-review

1 Citation (Scopus)

Abstract

In this work, we investigate the effects related to the etching process of the W bottom electrode (BE) on the breakdown voltages and the resistive switching (RS) characteristics of TiN/Ti/HfO₂/W memristors. Two different W-BE etching processes are compared: anisotropic dry etching and isotropic wet etching. In order to complete the analysis, scanning electron microscope inspections are used to investigate the profile of the patterned BE. Finally, the hysteretic current–voltage (I-V) characteristics are simulated using the Dynamic Memdiode Model (DMM).

Original language	English
Article number	108718
Number of pages	4
Journal	SOLID-STATE ELECTRONICS
Volume	207
DOIs	https://doi.org/10.1016/j.sse.2023.108718
Publication status	Published - Sept 2023

Keywords

Breakdown voltage
Dry etching
HfO
Memristor
Resistive switching
W electrode
Wet etching

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10.1016/j.sse.2023.108718

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@article{26e5b133641c48a7a637669eb3fab9ba,

title = "Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors",

abstract = "In this work, we investigate the effects related to the etching process of the W bottom electrode (BE) on the breakdown voltages and the resistive switching (RS) characteristics of TiN/Ti/HfO2/W memristors. Two different W-BE etching processes are compared: anisotropic dry etching and isotropic wet etching. In order to complete the analysis, scanning electron microscope inspections are used to investigate the profile of the patterned BE. Finally, the hysteretic current–voltage (I-V) characteristics are simulated using the Dynamic Memdiode Model (DMM).",

keywords = "Breakdown voltage, Dry etching, HfO, Memristor, Resistive switching, W electrode, Wet etching",

author = "M. Saludes-Tapia and F. Campabadal and E. Miranda and Gonz{\'a}lez, {M. B.}",

note = "Publisher Copyright: {\textcopyright} 2023 The Author(s)",

year = "2023",

month = sep,

doi = "10.1016/j.sse.2023.108718",

language = "English",

volume = "207",

journal = "SOLID-STATE ELECTRONICS",

issn = "0038-1101",

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TY - JOUR

T1 - Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors

AU - Saludes-Tapia, M.

AU - Campabadal, F.

AU - Miranda, E.

AU - González, M. B.

PY - 2023/9

Y1 - 2023/9

N2 - In this work, we investigate the effects related to the etching process of the W bottom electrode (BE) on the breakdown voltages and the resistive switching (RS) characteristics of TiN/Ti/HfO2/W memristors. Two different W-BE etching processes are compared: anisotropic dry etching and isotropic wet etching. In order to complete the analysis, scanning electron microscope inspections are used to investigate the profile of the patterned BE. Finally, the hysteretic current–voltage (I-V) characteristics are simulated using the Dynamic Memdiode Model (DMM).

AB - In this work, we investigate the effects related to the etching process of the W bottom electrode (BE) on the breakdown voltages and the resistive switching (RS) characteristics of TiN/Ti/HfO2/W memristors. Two different W-BE etching processes are compared: anisotropic dry etching and isotropic wet etching. In order to complete the analysis, scanning electron microscope inspections are used to investigate the profile of the patterned BE. Finally, the hysteretic current–voltage (I-V) characteristics are simulated using the Dynamic Memdiode Model (DMM).

KW - Breakdown voltage

KW - Dry etching

KW - HfO

KW - Memristor

KW - Resistive switching

KW - W electrode

KW - Wet etching

UR - http://www.scopus.com/inward/record.url?scp=85166231255&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2023.108718

DO - 10.1016/j.sse.2023.108718

M3 - Article

AN - SCOPUS:85166231255

SN - 0038-1101

VL - 207

JO - SOLID-STATE ELECTRONICS

JF - SOLID-STATE ELECTRONICS

M1 - 108718

ER -

Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO₂/W memristors

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Keywords

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