Impact of temperature on the resistive switching behavior of embedded HfO<inf>2</inf>-based RRAM devices

Christian Walczyk; Damian Walczyk; Thomas Schroeder; Thomas Bertaud; Małgorzata Sowińska; Mindaugas Lukosius; Mirko Fraschke; Dirk Wolansky; Bernd Tillack; Enrique Miranda; Christian Wenger

doi:10.1109/TED.2011.2160265

Impact of temperature on the resistive switching behavior of embedded HfO<inf>2</inf>-based RRAM devices

Christian Walczyk, Damian Walczyk, Thomas Schroeder, Thomas Bertaud, Małgorzata Sowińska, Mindaugas Lukosius, Mirko Fraschke, Dirk Wolansky, Bernd Tillack, Enrique Miranda, Christian Wenger

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

143 Citations (Scopus)

Abstract

Back-end-of-line integrated 1 × 1 μm2 TiN/HfO 2/Ti/TiN MIM memory devices in a 0.25-μm complementary metal-oxide-semiconductor technology were built to investigate the conduction mechanism and the resistive switching behavior as a function of temperature. The temperature-dependent I-V characteristics in fresh devices are attributed to the Poole-Frenkel mechanism with an extracted trap energy level at φ ≈ 0.2 eV below the HfO2 conduction band. The trap level is associated with positively charged oxygen vacancies. The electroformed memory cells show a stable bipolar switching behavior in the temperature range from 213-413 K. The off -state current increases with temperature, whereas the on-state current can be described by a weak metallic behavior. Furthermore, the results suggest that the I-V cycling not only induces significant changes in the electrical properties of the MIM memory devices, i.e., the increase in the OFF-state current, but also stronger temperature dependence. The temperature effect on the ON-state and OFF-state characteristics is modeled within the framework of the quantum point-contact model for dielectric breakdown using an effective temperature-dependent confinement potential. © 2006 IEEE.

Original language	English
Article number	5948374
Pages (from-to)	3124-3131
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	9
DOIs	https://doi.org/10.1109/TED.2011.2160265
Publication status	Published - 1 Sep 2011

Keywords

Conduction process in virgin TiN/HfO /Ti/TiN memory cells 2
resistance-change random access memory (RRAM)
temperature dependence of the off-state and the on-state

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Walczyk, C., Walczyk, D., Schroeder, T., Bertaud, T., Sowińska, M., Lukosius, M., Fraschke, M., Wolansky, D., Tillack, B., Miranda, E., & Wenger, C. (2011). Impact of temperature on the resistive switching behavior of embedded HfO<inf>2</inf>-based RRAM devices. IEEE Transactions on Electron Devices, 58(9), 3124-3131. [5948374]. https://doi.org/10.1109/TED.2011.2160265

Walczyk, Christian ; Walczyk, Damian ; Schroeder, Thomas ; Bertaud, Thomas ; Sowińska, Małgorzata ; Lukosius, Mindaugas ; Fraschke, Mirko ; Wolansky, Dirk ; Tillack, Bernd ; Miranda, Enrique ; Wenger, Christian. / Impact of temperature on the resistive switching behavior of embedded HfO<inf>2</inf>-based RRAM devices. In: IEEE Transactions on Electron Devices. 2011 ; Vol. 58, No. 9. pp. 3124-3131.

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title = "Impact of temperature on the resistive switching behavior of embedded HfO2-based RRAM devices",

abstract = "Back-end-of-line integrated 1 × 1 μm2 TiN/HfO 2/Ti/TiN MIM memory devices in a 0.25-μm complementary metal-oxide-semiconductor technology were built to investigate the conduction mechanism and the resistive switching behavior as a function of temperature. The temperature-dependent I-V characteristics in fresh devices are attributed to the Poole-Frenkel mechanism with an extracted trap energy level at φ ≈ 0.2 eV below the HfO2 conduction band. The trap level is associated with positively charged oxygen vacancies. The electroformed memory cells show a stable bipolar switching behavior in the temperature range from 213-413 K. The off -state current increases with temperature, whereas the on-state current can be described by a weak metallic behavior. Furthermore, the results suggest that the I-V cycling not only induces significant changes in the electrical properties of the MIM memory devices, i.e., the increase in the OFF-state current, but also stronger temperature dependence. The temperature effect on the ON-state and OFF-state characteristics is modeled within the framework of the quantum point-contact model for dielectric breakdown using an effective temperature-dependent confinement potential. {\textcopyright} 2006 IEEE.",

keywords = "Conduction process in virgin TiN/HfO /Ti/TiN memory cells 2, resistance-change random access memory (RRAM), temperature dependence of the off-state and the on-state",

author = "Christian Walczyk and Damian Walczyk and Thomas Schroeder and Thomas Bertaud and Ma{\l}gorzata Sowi{\'n}ska and Mindaugas Lukosius and Mirko Fraschke and Dirk Wolansky and Bernd Tillack and Enrique Miranda and Christian Wenger",

year = "2011",

month = sep,

day = "1",

doi = "10.1109/TED.2011.2160265",

language = "English",

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Walczyk, C, Walczyk, D, Schroeder, T, Bertaud, T, Sowińska, M, Lukosius, M, Fraschke, M, Wolansky, D, Tillack, B, Miranda, E & Wenger, C 2011, 'Impact of temperature on the resistive switching behavior of embedded HfO<inf>2</inf>-based RRAM devices', IEEE Transactions on Electron Devices, vol. 58, no. 9, 5948374, pp. 3124-3131. https://doi.org/10.1109/TED.2011.2160265

Impact of temperature on the resistive switching behavior of embedded HfO<inf>2</inf>-based RRAM devices. / Walczyk, Christian; Walczyk, Damian; Schroeder, Thomas; Bertaud, Thomas; Sowińska, Małgorzata; Lukosius, Mindaugas; Fraschke, Mirko; Wolansky, Dirk; Tillack, Bernd; Miranda, Enrique; Wenger, Christian.

In: IEEE Transactions on Electron Devices, Vol. 58, No. 9, 5948374, 01.09.2011, p. 3124-3131.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Impact of temperature on the resistive switching behavior of embedded HfO2-based RRAM devices

AU - Walczyk, Christian

AU - Walczyk, Damian

AU - Schroeder, Thomas

AU - Bertaud, Thomas

AU - Sowińska, Małgorzata

AU - Lukosius, Mindaugas

AU - Fraschke, Mirko

AU - Wolansky, Dirk

AU - Tillack, Bernd

AU - Miranda, Enrique

AU - Wenger, Christian

PY - 2011/9/1

Y1 - 2011/9/1

N2 - Back-end-of-line integrated 1 × 1 μm2 TiN/HfO 2/Ti/TiN MIM memory devices in a 0.25-μm complementary metal-oxide-semiconductor technology were built to investigate the conduction mechanism and the resistive switching behavior as a function of temperature. The temperature-dependent I-V characteristics in fresh devices are attributed to the Poole-Frenkel mechanism with an extracted trap energy level at φ ≈ 0.2 eV below the HfO2 conduction band. The trap level is associated with positively charged oxygen vacancies. The electroformed memory cells show a stable bipolar switching behavior in the temperature range from 213-413 K. The off -state current increases with temperature, whereas the on-state current can be described by a weak metallic behavior. Furthermore, the results suggest that the I-V cycling not only induces significant changes in the electrical properties of the MIM memory devices, i.e., the increase in the OFF-state current, but also stronger temperature dependence. The temperature effect on the ON-state and OFF-state characteristics is modeled within the framework of the quantum point-contact model for dielectric breakdown using an effective temperature-dependent confinement potential. © 2006 IEEE.

AB - Back-end-of-line integrated 1 × 1 μm2 TiN/HfO 2/Ti/TiN MIM memory devices in a 0.25-μm complementary metal-oxide-semiconductor technology were built to investigate the conduction mechanism and the resistive switching behavior as a function of temperature. The temperature-dependent I-V characteristics in fresh devices are attributed to the Poole-Frenkel mechanism with an extracted trap energy level at φ ≈ 0.2 eV below the HfO2 conduction band. The trap level is associated with positively charged oxygen vacancies. The electroformed memory cells show a stable bipolar switching behavior in the temperature range from 213-413 K. The off -state current increases with temperature, whereas the on-state current can be described by a weak metallic behavior. Furthermore, the results suggest that the I-V cycling not only induces significant changes in the electrical properties of the MIM memory devices, i.e., the increase in the OFF-state current, but also stronger temperature dependence. The temperature effect on the ON-state and OFF-state characteristics is modeled within the framework of the quantum point-contact model for dielectric breakdown using an effective temperature-dependent confinement potential. © 2006 IEEE.

KW - Conduction process in virgin TiN/HfO /Ti/TiN memory cells 2

KW - resistance-change random access memory (RRAM)

KW - temperature dependence of the off-state and the on-state

U2 - 10.1109/TED.2011.2160265

DO - 10.1109/TED.2011.2160265

M3 - Article

VL - 58

SP - 3124

EP - 3131

IS - 9

M1 - 5948374

ER -