Original language | English |
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Pages (from-to) | 29-33 |
Journal | Microelectronic Engineering |
Volume | 72 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1 Jan 2004 |
Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides.
Research output: Contribution to journal › Article › Research
5
Citations
(Scopus)