Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides.

Research output: Contribution to journalArticleResearch

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)29-33
JournalMicroelectronic Engineering
Volume72
Issue number1-4
DOIs
Publication statusPublished - 1 Jan 2004

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