Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides.

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5 Citations (Scopus)

Original language	English
Pages (from-to)	29-33
Journal	Microelectronic Engineering
Volume	72
Issue number	1-4
DOIs	https://doi.org/10.1016/j.mee.2003.12.011
Publication status	Published - 1 Jan 2004

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@article{b6ee982dc10642c69947e1aeb841680b,

title = "Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides.",

author = "M. Porti and M. Nafr{\'i}a and X. Aymerich",

year = "2004",

month = jan,

day = "1",

doi = "10.1016/j.mee.2003.12.011",

language = "English",

volume = "72",

pages = "29--33",

journal = "Microelectronic Engineering",

issn = "0167-9317",

number = "1-4",

}

TY - JOUR

T1 - Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides.

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

PY - 2004/1/1

Y1 - 2004/1/1

U2 - 10.1016/j.mee.2003.12.011

DO - 10.1016/j.mee.2003.12.011

M3 - Article

VL - 72

SP - 29

EP - 33

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1-4

ER -