Hysteresis-free carbon nanotube field-effect transistors without passivation

J. Tittmann, S. Hermann, S.E. Schulz, A. Pacheco-Sanchez, M. Claus, M. Schröter, S.E. Schulz

Research output: Book/ReportProceedingResearchpeer-review

6 Citations (Scopus)


Back-gated carbon nanotube field-effect transistors have been fabricated using a wafer-level technology. Source and drain electrodes are structured by lift-off and wet etching. AFM measurements reveal residual contaminations originating from structuring processes. We investigate the particle removal by an oxygen plasma treatment depending on the process time. I/V characterization reveals a strong dependency of transistor characteristics, especially hysteresis behavior, on surface cleanliness. We find the removal of residual particles to be much more important than a passivation to keep water molecules from the transistor region. We show hysteresis-free transistor behavior even after 9 weeks of storage in air without passivation
Original languageEnglish
Number of pages2
ISBN (Electronic)978-1-4799-6384-3
Publication statusPublished - 8 Jul 2014

Publication series

Name2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)


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