Hydrostatic-pressure dependence of bound excitons in GaP

B. Gil, M. Baj, J. Camassel, H. Mathieu, C. Benoit À La Guillaume, N. Mestres, J. Pascual

Research output: Contribution to journalArticleResearchpeer-review

47 Citations (Scopus)

Abstract

We report for the first time an investigation of the low-temperature hydrostatic-pressure dependence of bound excitons in GaP. We have used a hydrostatic-pressure cell equipped with an optical window and filled with a transparent pressure-transmitting medium. Working with a sample temperature of about 5 K, we could reach a maximum pressure of 8 kbar and examined various recombination lines. This work reports the change in radiative recombination energy of (i) excitons bound to a single neutral donor (D0X complex), (ii) excitons bound to a single isoelectronic impurity (NX complex), and (iii) excitons bound to a pair of isoelectronic defects (NNX complexes). We find non-linear behaviors associated with the binding of an exciton around an isoelectronic trap. This is discussed in the light of existing model calculations. © 1984 The American Physical Society.
Original languageEnglish
Pages (from-to)3398-3407
JournalPhysical Review B
Volume29
Issue number6
DOIs
Publication statusPublished - 1 Jan 1984

Fingerprint Dive into the research topics of 'Hydrostatic-pressure dependence of bound excitons in GaP'. Together they form a unique fingerprint.

Cite this