Hydrogen-Release Mechanisms in the Breakdown of Thin SiO<inf>2</inf>Films

J. Suñé, E. Y. Wu

Research output: Contribution to journalArticleResearchpeer-review

65 Citations (Scopus)

Abstract

Mechanism of hydrogen-release in the breakdown of silica (SiO2) thin films was investigated. Defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges were determined using charge-to-breakdown statistics. It was observed that hydrogen-release mechanism in Si/SiO2interfaces tiggeres defect generation and consequently the dielectric breakdown of the oxides in the metal-oxide-semiconductor structures. The results show that multiple-electron-induced incoherent heating of Si-H bonds is not the hydrogen release mechanism involved in oxide breakdown.
Original languageEnglish
Article number087601
Pages (from-to)876011-876014
JournalPhysical Review Letters
Volume92
Issue number8
Publication statusPublished - 27 Feb 2004

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