Abstract
Mechanism of hydrogen-release in the breakdown of silica (SiO2) thin films was investigated. Defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges were determined using charge-to-breakdown statistics. It was observed that hydrogen-release mechanism in Si/SiO2interfaces tiggeres defect generation and consequently the dielectric breakdown of the oxides in the metal-oxide-semiconductor structures. The results show that multiple-electron-induced incoherent heating of Si-H bonds is not the hydrogen release mechanism involved in oxide breakdown.
Original language | English |
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Article number | 087601 |
Pages (from-to) | 876011-876014 |
Journal | Physical Review Letters |
Volume | 92 |
Issue number | 8 |
Publication status | Published - 27 Feb 2004 |