Hydrogen-Release Mechanisms in the Breakdown of Thin SiO<inf>2</inf>Films

J. Suñé; E. Y. Wu

Hydrogen-Release Mechanisms in the Breakdown of Thin SiO<inf>2</inf>Films

J. Suñé, E. Y. Wu

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

65 Citations (Scopus)

Abstract

Mechanism of hydrogen-release in the breakdown of silica (SiO2) thin films was investigated. Defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges were determined using charge-to-breakdown statistics. It was observed that hydrogen-release mechanism in Si/SiO2interfaces tiggeres defect generation and consequently the dielectric breakdown of the oxides in the metal-oxide-semiconductor structures. The results show that multiple-electron-induced incoherent heating of Si-H bonds is not the hydrogen release mechanism involved in oxide breakdown.

Original language	English
Article number	087601
Pages (from-to)	876011-876014
Journal	Physical Review Letters
Volume	92
Issue number	8
Publication status	Published - 27 Feb 2004

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title = "Hydrogen-Release Mechanisms in the Breakdown of Thin SiO2Films",

abstract = "Mechanism of hydrogen-release in the breakdown of silica (SiO2) thin films was investigated. Defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges were determined using charge-to-breakdown statistics. It was observed that hydrogen-release mechanism in Si/SiO2interfaces tiggeres defect generation and consequently the dielectric breakdown of the oxides in the metal-oxide-semiconductor structures. The results show that multiple-electron-induced incoherent heating of Si-H bonds is not the hydrogen release mechanism involved in oxide breakdown.",

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AU - Suñé, J.

AU - Wu, E. Y.

PY - 2004/2/27

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N2 - Mechanism of hydrogen-release in the breakdown of silica (SiO2) thin films was investigated. Defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges were determined using charge-to-breakdown statistics. It was observed that hydrogen-release mechanism in Si/SiO2interfaces tiggeres defect generation and consequently the dielectric breakdown of the oxides in the metal-oxide-semiconductor structures. The results show that multiple-electron-induced incoherent heating of Si-H bonds is not the hydrogen release mechanism involved in oxide breakdown.

AB - Mechanism of hydrogen-release in the breakdown of silica (SiO2) thin films was investigated. Defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges were determined using charge-to-breakdown statistics. It was observed that hydrogen-release mechanism in Si/SiO2interfaces tiggeres defect generation and consequently the dielectric breakdown of the oxides in the metal-oxide-semiconductor structures. The results show that multiple-electron-induced incoherent heating of Si-H bonds is not the hydrogen release mechanism involved in oxide breakdown.

M3 - Article

VL - 92

SP - 876011

EP - 876014

IS - 8

M1 - 087601

ER -