The mechanism of hydrogen release from the anode [Formula presented] interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms. © 2004 The American Physical Society.
|Journal||Physical Review Letters|
|Publication status||Published - 1 Jan 2004|