Abstract
The mechanism of hydrogen release from the anode [Formula presented] interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms. © 2004 The American Physical Society.
Original language | English |
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Journal | Physical Review Letters |
Volume | 92 |
DOIs | |
Publication status | Published - 1 Jan 2004 |