Hydrogen-Release Mechanisms in the Breakdown of Thin [Formula presented] Films

J. Suñé; E. Y. Wu

doi:https://doi.org/10.1103/PhysRevLett.92.087601

Hydrogen-Release Mechanisms in the Breakdown of Thin [Formula presented] Films

J. Suñé, E. Y. Wu

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

2 Citations (Scopus)

Abstract

The mechanism of hydrogen release from the anode [Formula presented] interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms. © 2004 The American Physical Society.

Original language	English
Journal	Physical Review Letters
Volume	92
DOIs	https://doi.org/10.1103/PhysRevLett.92.087601
Publication status	Published - 1 Jan 2004

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@article{6fc1002d8eb74b558317832c203772fe,

title = "Hydrogen-Release Mechanisms in the Breakdown of Thin [Formula presented] Films",

abstract = "The mechanism of hydrogen release from the anode [Formula presented] interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms. {\textcopyright} 2004 The American Physical Society.",

author = "J. Su{\~n}{\'e} and Wu, {E. Y.}",

year = "2004",

month = jan,

day = "1",

doi = "https://doi.org/10.1103/PhysRevLett.92.087601",

language = "English",

volume = "92",

}

TY - JOUR

T1 - Hydrogen-Release Mechanisms in the Breakdown of Thin [Formula presented] Films

AU - Suñé, J.

AU - Wu, E. Y.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - The mechanism of hydrogen release from the anode [Formula presented] interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms. © 2004 The American Physical Society.

AB - The mechanism of hydrogen release from the anode [Formula presented] interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms. © 2004 The American Physical Society.

UR - https://ddd.uab.cat/record/114408

U2 - https://doi.org/10.1103/PhysRevLett.92.087601

DO - https://doi.org/10.1103/PhysRevLett.92.087601

M3 - Article

VL - 92

ER -

Hydrogen-Release Mechanisms in the Breakdown of Thin [Formula presented] Films

Abstract

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