Hydrogen-Release Mechanisms in the Breakdown of Thin [Formula presented] Films

J. Suñé; E. Y. Wu

doi:https://doi.org/10.1103/PhysRevLett.92.087601

Hydrogen-Release Mechanisms in the Breakdown of Thin [Formula presented] Films

J. Suñé, E. Y. Wu

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

2 Citations (Scopus)

Abstract

The mechanism of hydrogen release from the anode [Formula presented] interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms. © 2004 The American Physical Society.

Original language	English
Journal	Physical Review Letters
Volume	92
DOIs	https://doi.org/10.1103/PhysRevLett.92.087601
Publication status	Published - 1 Jan 2004

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Suñé, J., & Wu, E. Y. (2004). Hydrogen-Release Mechanisms in the Breakdown of Thin [Formula presented] Films. Physical Review Letters, 92. https://doi.org/10.1103/PhysRevLett.92.087601

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