Hydrogen desorption in SiGe films: A diffusion limited process

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    Abstract

    A model to explain the hydrogen desorption kinetics in SiGe alloys is presented. This is an extension of a previous desorption model of hydrogen from Si, that considers the presence of three dimer types in the surface in which hydrogen atoms tend to pair before the desorption reaction. Surface diffusion is included in the model. The comparison with experimental results shows that desorption is a diffusion limited process. © 1997 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)3287-3289
    JournalApplied Physics Letters
    Volume70
    DOIs
    Publication statusPublished - 16 Jun 1997

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