High-sensitivity capacitive sensing interfacing circuit for monolithic CMOS M/NEMS resonators

J. Verd, A. Uranga, G. Abadal, J. Teva, F. Pérez-Murano, N. Barniol

Research output: Contribution to journalArticleResearchpeer-review

6 Citations (Scopus)

Abstract

A simple and high-sensitivity 0.35m CMOS readout circuit for resonant M/NEMS with capacitive sensing is presented. The proposed readout scheme presents an equivalent transimpedance gain of 140dBΩ (at 1MHz) and an input referred noise of 29nV/Hz1/2. Detection of submicrometre-scale cantilever vibrations in the MHz range is demonstrated with a displacement resolution of 33fm/Hz1/2. © The Institution of Engineering and Technology 2007.
Original languageEnglish
Pages (from-to)1274-1276
JournalElectronics Letters
Volume43
DOIs
Publication statusPublished - 19 Nov 2007

Fingerprint

Dive into the research topics of 'High-sensitivity capacitive sensing interfacing circuit for monolithic CMOS M/NEMS resonators'. Together they form a unique fingerprint.

Cite this