High performance seesaw torsional CMOS-MEMS relay using tungsten VIA layer

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Abstract

© 2018 by the authors. In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art.
Original languageEnglish
Article number579
JournalMicromachines
Volume9
DOIs
Publication statusPublished - 7 Nov 2018

Keywords

  • CMOS-MEMS
  • Mechanical relays
  • MEMS
  • MEMS relays
  • MEMS switches

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