High performance seesaw torsional CMOS-MEMS relay using tungsten VIA layer

Research output: Contribution to journalArticleResearch

3 Citations (Scopus)


© 2018 by the authors. In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art.
Original languageEnglish
Article number579
Publication statusPublished - 7 Nov 2018


  • MEMS
  • MEMS relays
  • MEMS switches
  • Mechanical relays


Dive into the research topics of 'High performance seesaw torsional CMOS-MEMS relay using tungsten VIA layer'. Together they form a unique fingerprint.

Cite this