High-k gate stacks electrical characterization at the nanoscale using conductive-AFM

M. Nafría; M. Porti; X. Blasco; L. Aguilera; X. Aymerich

High-k gate stacks electrical characterization at the nanoscale using conductive-AFM

M. Nafría, M. Porti, X. Blasco, L. Aguilera, X. Aymerich

Department of Electronic Engineering

Research output: Chapter in Book › Chapter › Research

Original language	English
Title of host publication	Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices (NATO Science Series II: Mathematics, Physics and Chemistry)
Place of Publication	Berlín (DE)
Pages	435-446
Number of pages	11
Edition	1
Publication status	Published - 1 Jan 2006

Cite this

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title = "High-k gate stacks electrical characterization at the nanoscale using conductive-AFM",

author = "M. Nafr{\'i}a and M. Porti and X. Blasco and L. Aguilera and X. Aymerich",

year = "2006",

month = jan,

day = "1",

language = "English",

isbn = "978-1-4020-4366-6",

pages = "435--446",

booktitle = "Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices (NATO Science Series II: Mathematics, Physics and Chemistry)",

edition = "1",

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High-k gate stacks electrical characterization at the nanoscale using conductive-AFM. / Nafría, M.; Porti, M.; Blasco, X.; Aguilera, L.; Aymerich, X.

Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices (NATO Science Series II: Mathematics, Physics and Chemistry). 1. ed. Berlín (DE), 2006. p. 435-446.

Research output: Chapter in Book › Chapter › Research

TY - CHAP

T1 - High-k gate stacks electrical characterization at the nanoscale using conductive-AFM

AU - Nafría, M.

AU - Porti, M.

AU - Blasco, X.

AU - Aguilera, L.

AU - Aymerich, X.

PY - 2006/1/1

Y1 - 2006/1/1

M3 - Chapter

SN - 978-1-4020-4366-6

SP - 435

EP - 446

BT - Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices (NATO Science Series II: Mathematics, Physics and Chemistry)

CY - Berlín (DE)

ER -