© 2017 IOP Publishing Ltd. This article studies the physical and electrical behavior of Gd 2-x Sc x O 3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films obtained were close to stoichiometry, amorphous and with minimal interfacial regrowth. By fabricating metal-insulator-semiconductor capacitors we found that a moderate temperature annealing is needed to enhance permittivity, which reaches a high value of 32 while keeping moderate leakage. Finally, the feasibility of interface scavenging in this material with Ti gate electrodes is also demonstrated.
|Journal||Semiconductor Science and Technology|
|Publication status||Published - 10 Feb 2017|
- high-k dielectrics
- rare-earth scandates
- scavenging electrodes