High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

M. A. Pampillón, E. San Andrés, P. C. Feijoo, J. L.G. Fierro

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3 Citations (Scopus)

Abstract

© 2017 IOP Publishing Ltd. This article studies the physical and electrical behavior of Gd 2-x Sc x O 3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films obtained were close to stoichiometry, amorphous and with minimal interfacial regrowth. By fabricating metal-insulator-semiconductor capacitors we found that a moderate temperature annealing is needed to enhance permittivity, which reaches a high value of 32 while keeping moderate leakage. Finally, the feasibility of interface scavenging in this material with Ti gate electrodes is also demonstrated.
Original languageEnglish
Article number035016
JournalSemiconductor Science and Technology
Volume32
Issue number3
DOIs
Publication statusPublished - 10 Feb 2017

Keywords

  • high-k dielectrics
  • rare-earth scandates
  • scavenging electrodes

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