TY - JOUR
T1 - High-frequency sensor technologies for inertial force detection based on thin-film bulk acoustic wave resonators (FBAR)
AU - Campanella, Humberto
AU - Plaza, José Antonio
AU - Montserrat, Josep
AU - Uranga, Arantxa
AU - Esteve, Jaume
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009/4/1
Y1 - 2009/4/1
N2 - High-frequency technologies and fabrication processes intended for inertial force detection have been developed. The sensing devices are based on longitudinal-mode thin-film bulk acoustic wave resonators (FBAR) monolithically integrated with silicon (Si) technologies. Thus, compatibility with both technologies has been achieved in order to design and fabricate FBAR-based inertial force sensors. Characterization of the FBAR was carried out and the operating principle of the inertial force detectors studied. Additionally, characterization of a resonant accelerometer with embedded-FBAR was performed with the aim of concept's demonstration. So far, future developments of the technology and the application are discussed.
AB - High-frequency technologies and fabrication processes intended for inertial force detection have been developed. The sensing devices are based on longitudinal-mode thin-film bulk acoustic wave resonators (FBAR) monolithically integrated with silicon (Si) technologies. Thus, compatibility with both technologies has been achieved in order to design and fabricate FBAR-based inertial force sensors. Characterization of the FBAR was carried out and the operating principle of the inertial force detectors studied. Additionally, characterization of a resonant accelerometer with embedded-FBAR was performed with the aim of concept's demonstration. So far, future developments of the technology and the application are discussed.
KW - Accelerometer
KW - Bulk micromachining
KW - Inertial force detection
KW - Reactive ion etching
KW - Thin-film bulk acoustic wave resonator (FBAR)
UR - http://www.scopus.com/inward/record.url?scp=67349228868&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2008.11.006
DO - 10.1016/j.mee.2008.11.006
M3 - Article
SN - 0167-9317
VL - 86
SP - 1254
EP - 1257
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 4-6
ER -