High-frequency sensor technologies for inertial force detection based on thin-film bulk acoustic wave resonators (FBAR)

Humberto Campanella, José Antonio Plaza, Josep Montserrat, Arantxa Uranga, Jaume Esteve

Research output: Contribution to journalArticleResearchpeer-review

22 Citations (Scopus)

Abstract

High-frequency technologies and fabrication processes intended for inertial force detection have been developed. The sensing devices are based on longitudinal-mode thin-film bulk acoustic wave resonators (FBAR) monolithically integrated with silicon (Si) technologies. Thus, compatibility with both technologies has been achieved in order to design and fabricate FBAR-based inertial force sensors. Characterization of the FBAR was carried out and the operating principle of the inertial force detectors studied. Additionally, characterization of a resonant accelerometer with embedded-FBAR was performed with the aim of concept's demonstration. So far, future developments of the technology and the application are discussed. © 2008 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1254-1257
JournalMicroelectronic Engineering
Volume86
DOIs
Publication statusPublished - 1 Apr 2009

Keywords

  • Accelerometer
  • Bulk micromachining
  • Inertial force detection
  • Reactive ion etching
  • Thin-film bulk acoustic wave resonator (FBAR)

Fingerprint Dive into the research topics of 'High-frequency sensor technologies for inertial force detection based on thin-film bulk acoustic wave resonators (FBAR)'. Together they form a unique fingerprint.

Cite this