High ferroelectric polarization in c -oriented BaTiO <inf>3</inf> epitaxial thin films on SrTiO <inf>3</inf> /Si(001)

M. Scigaj, C. H. Chao, J. Gázquez, I. Fina, R. Moalla, G. Saint-Girons, M. F. Chisholm, G. Herranz, J. Fontcuberta, R. Bachelet, F. Sánchez

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    Abstract

    © 2016 Author(s). The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3 /LaNiO 3 /SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2 . This result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.
    Original languageEnglish
    Article number122903
    JournalApplied Physics Letters
    Volume109
    Issue number12
    DOIs
    Publication statusPublished - 19 Sep 2016

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