© 2016 Author(s). The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3 /LaNiO 3 /SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2 . This result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.
|Journal||Applied Physics Letters|
|Publication status||Published - 19 Sept 2016|