| Translated title of the contribution | High-energy hydrogen-ion implantation in 6H-SiC: Raman and infrared in-depth investigations |
|---|---|
| Original language | Multiple languages |
| Pages (from-to) | 1-1 |
| Journal | Journal De Physique. IV : JP |
| Publication status | Accepted in press - 1 Jan 2003 |
High-energy hydrogen-ion implantation in 6H-SiC: Raman and infrared in-depth investigations
D.J. Brink, T. Maurice, S. Blanque, H. Kunert, J. Camassel, J. Pascual
Research output: Contribution to journal › Article › Research › peer-review